Film thickness dependent electron transport and optical properties of thermochromic VO2

被引:4
作者
Driouach, Adil [1 ]
Samad, B. Abdel [1 ]
Ashrit, P. V. [1 ]
机构
[1] Univ Moncton, Dept Phys & Astron, Thin Films & Photon Res Grp GCMP, Moncton, NB E1A 3E9, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Vanadium dioxide; Thin films; Phase transition; Hysteresis; Optical switching; Electrical switching; POLYCRYSTALLINE FILMS; RESISTIVITY MODEL; REFLECTION;
D O I
10.1016/j.tsf.2023.139921
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vanadium dioxide (VO2) thin films are very well known for their efficient thermochromic properties, i.e. tem-perature dependent reversible switching of their optical and electrical properties, rooted in a first order phase change at the transition temperature of 68 degrees C. Despite a vast amount of basic and applied research on VO2 thin films, a simultaneous study of the optical and electrical switching properties, especially as functions of film thickness is scarcely reported. Such a study may provide interesting insight into the basics of thermochromic switching and lead to a better designing of more efficient thermochromically switching optical and electrical interactive devices. In this work we have studied the film thickness dependence of the optical and electrical properties of sputter deposited VO2 thin films. The size dependent electrical behavior of these films is examined in the light of the existing theories. Applying Drude model which combines the optical and electrical behaviour, all the relevant parameters (plasma frequency and free electron density) are calculated for the semi-conducting and metallic phases of the VO2 thin films. All the obtained parameters and the strong thermochromic switching behaviour indicate that the films are predominantly made up of VO2. Importance of distinction between optical hysteresis derived transition temperature and the one derived from resistance hysteresis is emphasized. This comprehensive and in-depth study is expected to lead to a better understanding and design of switching devices based on VO2 thin films.
引用
收藏
页数:10
相关论文
共 34 条
  • [1] Ashrit P.V., 2018, SVC B FALL WINTER PA, P55
  • [2] REFLECTION-TRANSMISSION PHOTOELLIPSOMETRY - THEORY AND EXPERIMENTS
    BADER, G
    ASHRIT, PV
    GIROUARD, FE
    TRUONG, VV
    [J]. APPLIED OPTICS, 1995, 34 (10): : 1684 - 1691
  • [3] Near-zero IR transmission in the metal-insulator transition of VO2 thin films
    Balu, R.
    Ashrit, P. V.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (02)
  • [4] Bansal Amit, 2014, Indian Journal of Materials Science, DOI 10.1155/2014/897125
  • [5] Synthesis and characterization of VO2-based thermochromic thin films for energy-efficient windows
    Batista, Carlos
    Ribeiro, Ricardo M.
    Teixeira, Vasco
    [J]. NANOSCALE RESEARCH LETTERS, 2011, 6
  • [6] Cao X., 2018, Emerging Solar Energy Materials, P3
  • [7] Cezairliyan A., 1974, J RES NAT BUREAU STA, V78A
  • [8] Resistance hysteresis loop characteristic analysis of VO2 thin film for high sensitive microbolometer
    Chen, Xiqu
    Lv, Qiang
    [J]. OPTIK, 2015, 126 (20): : 2718 - 2722
  • [9] Sharp contrast in the electrical and optical properties of vanadium Wadsley (VmO2m+1, m > 1) epitaxial films selectively stabilized on (111)-oriented Y-stabilized ZrO2
    Choi, Songhee
    Son, Jaeseok
    Oh, Junhyeob
    Lee, Ji-Hyun
    Jang, Jae Hyuck
    Lee, Shinbuhm
    [J]. PHYSICAL REVIEW MATERIALS, 2019, 3 (06)
  • [10] Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films
    Fu, Deyi
    Liu, Kai
    Tao, Tao
    Lo, Kelvin
    Cheng, Chun
    Liu, Bin
    Zhang, Rong
    Bechtel, Hans A.
    Wu, Junqiao
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (04)