Study of growth kinetics of intermetallic compounds at BAl88Si/ Cu interface

被引:6
作者
Li, Yunpeng [1 ,2 ]
Yu, Hua [1 ,2 ]
Shi, Yinkai [1 ,2 ]
Cai, Fangfang [1 ,2 ]
Cao, Xinna [1 ,2 ]
Zhang, Liangliang [3 ]
Wei, Shizhong [1 ,2 ]
Zhong, Sujuan [4 ]
Long, Weimin [4 ]
Jiu, Yongtao [4 ]
Chang, Yunfeng [4 ]
机构
[1] Henan Univ Sci & Technol, Sch Mat Sci & Engn, Henan 471003, Peoples R China
[2] Henan Univ Sci & Technol, Natl Joint Engn Res Ctr Abras Control & Molding Me, Henan 471003, Peoples R China
[3] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116000, Peoples R China
[4] Zhengzhou Res Inst Mech Engn Co Ltd, Zhengzhou 450000, Peoples R China
关键词
Interfaces; Intermetallic alloys and compounds; Diffusion; Kinetics; MICROSTRUCTURE;
D O I
10.1016/j.matlet.2022.133269
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, the growth of the intermetallic compounds (IMCs) at the BAl88Si/Cu interface was analyzed and its growth kinetics was investigated. The results reveal that Cu3Al, Cu9Al4, Cu3Al2 and CuAl, four-layer IMCs are formed at the interface due to the interdiffusion of copper elements and aluminum elements. The thickness of the IMCs increases with increasing temperature and holding time, the transition from Cu3Al2 to Cu9Al4 is also observed at 893 K. The activation energies of the Cu3Al, Cu9Al4 and total IMCs layers are obtained from the Arrhenius equation and are 127.10 kJ/mol, 189.68 kJ/mol and 184.93 kJ/mol, respectively, which provide a reference for assessing the ease of growth of IMCs.
引用
收藏
页数:4
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