Design and Optical Performance of a Single-Junction GaAs Nanowire-Ge Solar Cell

被引:2
作者
Sistla, V. Sudheer Kumar [1 ]
Bitra, Surendra Kumar [2 ]
Chella, Santhosh [1 ]
机构
[1] Koneru Lakshmaiah Educ Fdn, Dept Elect & Commun Engn, Vaddeswaram, India
[2] Astra Microwave Prod Ltd, Hyderabad, India
关键词
absorption; E&H field; FDTD; GaAs nanowire; III-V semiconductor nanowires; optical simulation; ABSORPTION; SIMULATION;
D O I
10.48084/etasr.6121
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Solar cells are one of the most effective methods available for energy harvesting and are constructed from a variety of materials. In recent years, the use of novel materials for low-cost, high-efficiency photovoltaics has been one of the most exciting breakthroughs. This study conducted an in-depth investigation into the optical characteristics of GaAs nanowires on a Ge bottom cell. Geometric optimization of nanowires is necessary to increase solar cell performance metrics. The absorption efficiency per unit volume was considerably boosted over its traditional bulk and thin-film counterparts as a result of inherent antireflection, intensive stimulation of resonant modes, and optical antenna effects. A 3D FDTD framework was used to acquire optical properties and incorporate numerical values. Under typical AM 1.5G illumination, the diameter of GaAs nanowires was optimized to 170 nm.
引用
收藏
页码:11655 / 11660
页数:6
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