Inner Shell Influence on the Optical Properties of InP/ZnSeS/ZnS Quantum Dots

被引：10
作者：
Chen, Peixian [1 ,2 ]
Liu, Huan [2 ]
Cui, Yanyan [2 ]
Liu, Cheng [3 ]
Li, Yiwen [1 ]
Gao, Yang [2 ]
Cheng, Jiaji [1 ]
He, Tingchao [2 ]
机构：
[1] Hubei Univ, Sch Mat Sci & Engn, Minist Educ Key Lab Green Preparat & Applicat Func, Hubei Prov Key Lab Polymers, Wuhan 430062, Peoples R China
[2] Shenzhen Univ, Coll Phys & Optoelect Engn, Key Lab Optoelect Devices & Syst Minist Educ & Gua, Shenzhen 518060, Peoples R China
[3] Hubei Changsheng Composite Mat Co Ltd, Xianning 437099, Hubei, Peoples R China
来源：
JOURNAL OF PHYSICAL CHEMISTRY C | 2023年 / 127卷 / 05期
基金：
中国国家自然科学基金;
关键词：
CORE; RECOMBINATION;
D O I：
10.1021/acs.jpcc.3c00144
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The design of core/shell InP-based quantum dots (QDs) can not only retain the low toxicity of the InP core but also significantly enhance its stability, making it suitable for various applications. However, the influence of the shell layer on the optical properties of InP QDs is still not clear, which is not conducive to the optimization of optical properties and application exploration. Here, the optical properties of two kinds of InP-based QDs, i.e., InP/ZnS and InP/ZnSeS/ZnS, have been comparatively investigated. Compared with the former, the latter possesses improved photoluminescence quantum yield and weaker defect state emission. Due to the introduction of the inner ZnSeS shell, the surface states of the InP core can be reduced and a quasi-II electronic structure is formed, which is beneficial for suppressing the blinking effect. In addition, compared with InP/ZnS QDs, InP/ZnSeS/ZnS QDs exhibit higher two- and three-photon brightness in the wavelength range from 700 to 1500 nm. Our work reveals the importance of the inner ZnSeS shell for the optimization of the optical properties of InP-based QDs.
引用
收藏
页码：2464 / 2470
页数：7
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