Plasma Nitridation Effect on β-Ga2O3 Semiconductors

被引：6
作者：
Kim, Sunjae [1 ,2 ]
Kim, Minje [1 ,2 ]
Kim, Jihyun [3 ]
Hwang, Wan Sik [1 ,2 ]
机构：
[1] Korea Aerosp Univ, Dept Mat Sci & Engn, Goyang 10540, South Korea
[2] Korea Aerosp Univ, Dept Smart Air Mobil, Goyang 10540, South Korea
[3] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 08826, South Korea
来源：
NANOMATERIALS | 2023年 / 13卷 / 07期
关键词：
Ga2O3; gallium oxide; plasma nitridation; defect density; ELECTRICAL CHARACTERISTICS; PERFORMANCE; DENSITY; FILMS; LAYER;
D O I：
10.3390/nano13071199
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including beta-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline beta-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline beta-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline beta-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.
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页数：7
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