Atomic layer etching (ALE) of III-nitrides

被引：9

作者：

Ho, Wan Ying ^{[1
]}

Chow, Yi Chao ^{[1
]}

Biegler, Zachary ^{[1
]}

Qwah, Kai Shek ^{[1
]}

Tak, Tanay ^{[1
]}

Wissel-Garcia, Ashley ^{[1
]}

Liu, Iris ^{[1
]}

Wu, Feng ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 06期

基金：

美国国家科学基金会;

关键词：

INDUCTIVELY-COUPLED PLASMA; GAN POLAR SURFACE; DAMAGE;

D O I：

10.1063/5.0159048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic layer etching (ALE) was performed on (Al, In, Ga)N thin films using a cyclic process of alternating Cl-2 gas absorption and Ar+ ion bombardment in an inductively coupled plasma etcher system. The etch damage was characterized by comparing photoluminescence of blue single quantum well light-emitting diodes before and after the etch as well as bulk resistivities of etched p-doped layers. It was found that etched surfaces were smooth and highly conformal, retaining the step-terrace features of the as-grown surface, thus realizing ALE. Longer exposures to the dry etching increased the bulk resistivity of etched surfaces layers slightly, with a damaged depth of similar to 55nm. With further optimization and damage recovery, ALE is a promising candidate for controlled etching with atomic accuracy. It was found that Al0.1Ga0.9N acts as an etch barrier for the ALE etch, making it a suitable etch to reveal buried V-defects in III-nitride light emitting diodes.

引用

页数：6

共 42 条

[1] Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs [J].

Buttari, D ;

Heikman, S ;

Keller, S ;

Mishra, UK .

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, :461-469

[2] Homoepitaxial GaN micropillar array by plasma-free photo-enhanced metal-assisted chemical etching [J].

Chan, Clarence Y. ;

Namiki, Shunya ;

Hite, Jennifer K. ;

Mastro, Michael A. ;

Qadri, Syed B. ;

Li, Xiuling .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (05)

[3]

Cohen S. S., 1986, Metal-Semiconductor Contacts and Devices, V13

[4] Wet chemical digital etching of GaAs at room temperature [J].

DeSalvo, GC ;

Bozada, CA ;

Ebel, JL ;

Look, DC ;

Barrette, JP ;

Cerny, CLA ;

Dettmer, RW ;

Gillespie, JK ;

Havasy, CK ;

Jenkins, TJ ;

Nakano, K ;

Pettiford, CI ;

Quach, TK ;

Sewell, JS ;

Via, GD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (11) :3652-3656

[5]

Dineen M., 2020, Advanced Etch Technology for Nanopatterning IX, P17

[6] Characterization techniques of ion bombardment damage on electronic devices during plasma processing-plasma process-induced damage [J].

Eriguchi, Koji .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (04)

[7] Atomic layer etching of AlGaN using Cl2 and Ar gas chemistry and UV damage evaluation [J].

Fukumizu, Hiroyuki ;

Sekine, Makoto ;

Hori, Masaru ;

Kanomaru, Koji ;

Kikuchi, Takuo .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2019, 37 (02)

[8] Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM) [J].

Ho, Wan Ying ;

Johnson, Cameron W. ;

Tak, Tanay ;

Sauty, Mylene ;

Chow, Yi Chao ;

Nakamura, Shuji ;

Schmid, Andreas ;

Peretti, Jacques ;

Weisbuch, Claude ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2023, 123 (03)

[9] Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs [J].

Ho, Wan Ying ;

Chow, Yi Chao ;

Myers, Daniel J. ;

Wu, Feng ;

Peretti, Jacques ;

Weisbuch, Claude ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2021, 119 (05)

[10] DIGITAL CHEMICAL VAPOR-DEPOSITION AND ETCHING TECHNOLOGIES FOR SEMICONDUCTOR PROCESSING [J].

HORIIKE, Y ;

TANAKA, T ;

NAKANO, M ;

ISEDA, S ;

SAKAUE, H ;

NAGATA, A ;

SHINDO, H ;

MIYAZAKI, S ;

HIROSE, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :1844-1850

← 1 2 3 4 5 →