Extraordinary bulk-insulating behavior in the strongly correlated materials FeSi and FeSb2

被引:7
作者
Eo, Yun Suk [1 ,2 ]
Avers, Keenan [1 ,2 ]
Horn, Jarryd A. [1 ,2 ]
Yoon, Hyeok [1 ,2 ]
Saha, Shanta R. [1 ,2 ]
Suarez, Alonso [1 ,2 ]
Fuhrer, Michael S. [3 ,4 ]
Paglione, Johnpierre [1 ,2 ,5 ]
机构
[1] Univ Maryland, Maryland Quantum Mat Ctr, College Pk, MD 20742 USA
[2] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
[3] Monash Univ, Sch Phys & Astron, Melbourne, Vic 3800, Australia
[4] Monash Univ, ARC Ctr Excellence Future Low Energy Elect Technol, Melbourne, Vic 3800, Australia
[5] Canadian Inst Adv Res, Toronto, ON M5G 1Z8, Canada
关键词
SEMICONDUCTING PROPERTIES; ELECTRONIC-STRUCTURE; PHYSICAL-PROPERTIES; OPTICAL-PROPERTIES; MIXED-VALENCE; FLOATING-ZONE; SURFACE; TRANSITION; TRANSPORT; COMPOUND;
D O I
10.1063/5.0148249
中图分类号
O59 [应用物理学];
学科分类号
摘要
4f electron-based topological Kondo insulators have long been researched for their potential to conduct electric current via protected surface states, while simultaneously exhibiting unusually robust insulating behavior in their interiors. To this end, we have investigated the electrical transport of the 3d-based correlated insulators FeSi and FeSb2, which have exhibited enough similarities to their f electron cousins to warrant investigation. By using a double-sided Corbino disk transport geometry, we show unambiguous evidence of surface conductance in both of these Fe-based materials. In addition, by using a four-terminal Corbino inverted resistance technique, we extract the bulk resistivity as a function of temperature. Similar to topological Kondo insulator SmB6, the bulk resistivity of FeSi and FeSb2 is confirmed to exponentially increase by up to 9 orders of magnitude from room temperature to the lowest accessible temperature. This demonstrates that these materials are excellent bulk insulators, providing an ideal platform for studying correlated 2D physics.
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页数:7
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