Long-wavelength infrared PπBN photodetectors based on InAs/GaSb type-II superlattice

被引：1
|
作者：
Jiang Zhi [1 ]
Zhou Xu-chang [1 ]
Li Jun-bin [1 ]
Wang Hai-peng [1 ]
Huang You-wen [1 ]
Li Yan-hui [1 ]
Yang Chun-zhang [1 ]
Kong Jin-cheng [1 ]
机构：
[1] Kunming Inst Phys, Kunming 650223, Yunnan, Peoples R China
来源：
EARTH AND SPACE: FROM INFRARED TO TERAHERTZ, ESIT 2022 | 2023年 / 12505卷
关键词：
Type-II superlattice; InAs/InAsSb superlattice; Long wavelength; Infrared detector; MBE growth; OPTICAL-PROPERTIES;
D O I：
10.1117/12.2664979
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
Long-wavelength infrared InAs/GaSb type-II superlattice P pi BN photodetectors are demonstrated on GaSb substrates. The focal plane array device consists of a 2.0 mu m thick absorber layer and has a 50% cutoff wavelength of 11.3 mu m, and a maximum resistance-area product of 800 Omega.cm(2) at 77 K. And the resistance-area product stay above 500 Omega.cm(2) at the range from -200 mV to -1100 mV. These single units show good consistency. It has laid a reliable foundation for the manufacturing of focal plane arrays.
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页数：5
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