EFFECT OF LOW-DOSE-RATE IONIZING RADIATION ON THE COMPLEX DIELECTRIC PERMITTIVITY OF CdZnTe CRYSTALS

被引：0

作者：

Poluboiarov, O. ^{[1
]}

Chugai, O. ^{[1
]}

Oliinyk, S. ^{[1
]}

Sliusar, D. ^{[1
]}

Sulima, S. ^{[1
]}

机构：

[1] Kharkiv Natl Aerosp Univ, Dept Phys, Kharkiv Aviat Inst, 17 Chkalova St, UA-61070 Kharkiv, Ukraine

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2023年 / 63卷 / 01期

关键词：

localized states; semiconductors; complex dielectric permittivity; cadmium zinc-telluride; ion-izing radiation; CADMIUM ZINC TELLURIDE; DETECTORS; CENTERS;

D O I：

10.3952/physics.2023.63.1.5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

For the first time, the change in the real and imaginary parts of Cd1-xZnxTe crystals complex dielectric permittivity when exposed to ionizing radiation with a small exposure dose rate (about hundreds of mu R/h) has been studied. Significant changes in the values of both parts of complex dielectric permittivity have been revealed. Regularities of specified changes have been established and explained taking into account a different radiation effect on free and bound charges. The basis of effect is the changes in the charge carrier localized states of point defect associates. Their appearance is due to a high concentration and a variety of intrinsic structural defects in the studied crystals as a consequence of the deviation of the crystal composi-tion from the stoichiometric one.

引用

页码：35 / 39

页数：5

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