Facile Fabrication and Developing the Structural, Optical and Electrical Properties of SiC/Y2O3 Nanostructures Doped PMMA for Optics and Potential Nanodevices

This work aims to improve the structural, optical and electrical characteristics of silicon carbide(SiC) yttrium oxide(Y2O3) nanostructures doped poly-methyl methacrylate(PMMA) to utilize it for various optics and potential nanodevices like light filters, transistors sensors diodes, lasers, electronics gates which were distinguished by low cost, excellent optical and electrical properties, flexible and low weight. Results showed that the absorbance of PMMA enhanced about 76.3% at photon wavelength(lambda = 440 nm) when the SiC/Y2O3 NPs content reached (4.8wt.%). The energy gap value of PMMA reduced from 4.3 eV to 3 eV with an increase in the SiC/Y2O3 NPs content. Doping PMMA with SiC/Y2O3 NPs improved the optical constants. The dielectric constant and AC electrical conductivity) of PMMA enhanced about 22.5% and 31.6 when the SiC/Y2O3 NPs content reached (4.8w.%) at frequency (f = 100 Hz). The obtained results indicated that the doping PMMA with SiC/Y(2)O(3)NPs improved the optical, structural and electrical characteristics which made the PMMA/SiC/Y2O3 nanostructures are promising materials for optics and potential nanodevices in the development of optoelectronics approaches.