Phase Equilibria in Aluminium-Ruthenium-Silicon System near 1200 Kelvin

被引：1
作者：
Kitahara, Koichi [1 ,2 ,5 ]
Takakura, Hiroyuki [3 ]
Iwasaki, Yutaka [2 ,4 ]
Kimura, Kaoru [2 ,4 ,6 ]
机构：
[1] Natl Def Acad, Sch Elect & Comp Engn, Dept Mat Sci & Engn, Yokosuka 2398686, Japan
[2] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Kashiwa 2778561, Japan
[3] Hokkaido Univ, Fac Engn, Div Appl Phys, Sapporo 0608628, Japan
[4] Natl Inst Mat Sci NIMS, Tsukuba 3050047, Japan
[5] Natl Def Acad, Yokosuka 2398686, Japan
[6] Natl Inst Mat Sci NIMS, Tsukuba 3050047, Japan
来源：
MATERIALS TRANSACTIONS | 2024年 / 65卷 / 01期
关键词：
aluminium-ruthenium-silicon system; phase equilibrium; crystal structure; composition; prolonged annealing; X-ray diffraction; electron-probe X-ray microanalysis; matrix correction; incommensurate composite crystal; quasicrystal; CRYSTAL-STRUCTURE; THERMOELECTRIC-MATERIALS; QUASI-CRYSTALS; RU-SI; APPROXIMANTS; TRANSPORT;
D O I：
10.2320/matertrans.MT-M2023128
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A narrow-gap semiconductor with a complex crystal structure was recently discovered in the Al-Ru-Si system. To determine the homogeneity range of the semiconductor phase and further discover new phases, phase equilibria in the Al-Ru-Si system near 1200 K were investigated through prolonged-annealing experiments. Eleven new ternary phases including two incommensurate composite-crystalline and an icosahedral quasicrystalline phases were identified using powder and single-crystal X-ray diffraction, and their compositions at two-phase and three-phase equilibria were evaluated by means of electron-probe X-ray microanalysis. On the basis of the data obtained in this study and those adopted from the literature, a tentative isothermal section of the Al-Ru-Si equilibrium phase diagram near 1200 K was drawn. [doi:10.2320/matertrans.MT-M2023128]
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页码：18 / 26
页数：9
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