Investigation of Scaling on the Sensitivity and Performance of Tunnel FET Biosensor

被引：7
作者：
Goma, Priyanka [1 ]
Rana, Ashwani Kumar [1 ]
机构：
[1] Natl Inst Technol, Dept Elect & Commun Engn, Hamirpur 177005, India
来源：
IEEE SENSORS LETTERS | 2023年 / 7卷 / 08期
关键词：
Chemical and biological sensors; counter-doped Si0.65Ge0.35 pocket; dopingless tunnel FET (TFET) biosensor; scaling capability; sensitivity; TRANSISTORS; SIMULATION; DESIGN; TFET;
D O I：
10.1109/LSENS.2023.3296346
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This research investigates the scaling capability of the dopingless tunnel FET biosensor. A counter-doped Si0.65Ge0.35 pocket and a tunnel-gate-engineered structure are incorporated to improve the performance of the proposed biosensor in the presence of trap-assisted tunneling (TAT). The effect of the scaling is examined in respect of the gate length, body thickness, and the underlap length between the gate and the drain to note the performance of the biosensor. The study shows that scaling the gate length improves the sensitivity metrics such as threshold voltage sensitivity and on-current sensitivity of the biosensor while sacrificing I-on/I-off within acceptable limits according to ITRS guidelines. In addition to this, other important metrics such as I-on/I-off ratio, drain-induced barrier thinning, and on-current are also considered to analyze the scaling capability of the proposed biosensor.
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页数：4
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