FFC-NMR Power Supply with Hybrid Control of the Semiconductor Devices

被引:0
作者
Roque, Antonio [1 ,2 ]
Sousa, Duarte M. [3 ]
Sebastiao, Pedro J. [3 ]
Silva, Vitor [4 ]
Margato, Elmano [4 ]
机构
[1] Escola Super Tecnol Setubal, IPS, Campus IPS, P-2910761 Setubal, Portugal
[2] INESC ID, Campus IPS, P-2910761 Setubal, Portugal
[3] Univ Lisbon, Inst Super Tecn, Ave Rovisco Pais 1, P-1049001 Lisbon, Portugal
[4] Inst Super Engn Lisboa IPL, Rua Conselheiro Emidio Navarro 1, P-1959007 Lisbon, Portugal
关键词
power supply; semiconductor devices; NMR; upward transient; downward transient; hybrid control; FIELD-CYCLING NMR; RELAXATION; DESIGN;
D O I
10.3390/jlpea13030052
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The performance of FFC-NMR power supplies is evaluated not only considering the technique requirements but also comparing efficiencies and power consumption. Since the characteristics of FFC-NMR power supplies depend on the power circuit topology and on the control solutions, the control design is a core aspect for the development of new FFC systems. A new hybrid solution is described that allows controlling the power of semiconductors by switches (ON/OFF mode) or as a linear device. The approach avoids over-design of the power supply and makes it possible to implement new low power solutions constituting a novel design by joining a continuous match between the ON/OFF mode and the linear control of the power semiconductor devices.
引用
收藏
页数:10
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