A High-Speed True Random Number Generator Based on Unified Selector-RRAM

被引:1
|
作者
Qin, Yabo [1 ]
Wang, Zongwei [2 ,3 ]
Yang, Yunfan [1 ]
Shan, Linbo [1 ]
Wang, Qishen [1 ]
Bao, Lin [4 ]
Robertson, John [5 ]
Cai, Yimao [3 ]
Huang, Ru [3 ]
机构
[1] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China
[2] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China
[3] Beijing Adv Innovat Ctr Integrated Circuits, Beijing 100871, Peoples R China
[4] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[5] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England
关键词
Entropy; Delays; Hafnium oxide; NIST; Switching circuits; Random number generation; Resistive RAM; Cryptography; True random number generator; insulator-metal-transition; threshold switching; selector; resistive switching; DEVICE;
D O I
10.1109/LED.2023.3322992
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, we propose and experimentally demonstrate a high-speed true random number generator (TRNG) by exploiting the probabilistic delay time of threshold switching (TS) in a unified selector-resistive random access memory (RRAM). The device consists of dual functional layers (VO2/HfOx) and exhibits high endurance and fast switching speed, enabling a high bit generation rate (>28M/s). The switching parameters have been comprehensively investigated to obtain a stable and fine entropy. The generated bitstream successfully passes 12 National Institute of Standards and Technology (NIST) statistical tests without any postprocessing. The randomness and independence of the entropy source are justified by the autocorrelation test at a 95% confidence level, demonstrating great potential in high-performance hardware security and stochastic computing implementations.
引用
收藏
页码:1967 / 1970
页数:4
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