Tabletop extreme ultraviolet reflectometer for quantitative nanoscale reflectometry, scatterometry, and imaging

被引:10
作者
Esashi, Yuka [1 ,2 ,3 ]
Jenkins, Nicholas W. [1 ,2 ,3 ]
Shao, Yunzhe [1 ,2 ,3 ]
Shaw, Justin M. [4 ]
Park, Seungbeom [5 ]
Murnane, Margaret M. [1 ,2 ,3 ]
Kapteyn, Henry C. [1 ,2 ,3 ,6 ]
Tanksalvala, Michael [1 ,2 ,3 ]
机构
[1] Univ Colorado, Dept Phys, JILA, Boulder, CO 80309 USA
[2] Univ Colorado, STROBE NSF Sci & Technol Ctr, Boulder, CO 80309 USA
[3] NIST, Boulder, CO 80309 USA
[4] NIST, Quantum Electromagnet Div, Boulder, CO 80305 USA
[5] Samsung Elect Co Ltd, Core Technol R&D Team, Mechatron Res, Hwasung 18848, South Korea
[6] KMLabs Inc, Boulder, CO 80301 USA
基金
美国国家科学基金会;
关键词
COUPLED-WAVE ANALYSIS; X-RAY; LINE ROUGHNESS; THIN-FILM; REFLECTION; SCATTERING; SURFACE; ALGORITHMS; GENERATION;
D O I
10.1063/5.0175860
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Imaging using coherent extreme-ultraviolet (EUV) light provides exceptional capabilities for the characterization of the composition and geometry of nanostructures by probing with high spatial resolution and elemental specificity. We present a multi-modal tabletop EUV imaging reflectometer for high-fidelity metrology of nanostructures. The reflectometer is capable of measurements in three distinct modes: intensity reflectometry, scatterometry, and imaging reflectometry, where each mode addresses different nanostructure characterization challenges. We demonstrate the system's unique ability to quantitatively and non-destructively measure the geometry and composition of nanostructures with tens of square microns field of view and sub-nanometer precision. Parameters such as surface and line edge roughness, density, nanostructure linewidth, and profile, as well as depth-resolved composition, can be quantitatively determined. The results highlight the applicability of EUV metrology to address a wide range of semiconductor and materials science challenges.
引用
收藏
页数:12
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