Exposure to solvent vapours for enhanced N-type OTFT stability

被引:3
作者
Brixi, Samantha [1 ]
Lamontagne, Halynne R. [1 ,2 ]
King, Benjamin [1 ]
Shuhendler, Adam J. [2 ,3 ,4 ]
Lessard, Benoit H. [1 ,5 ]
机构
[1] Univ Ottawa, Dept Chem & Biol Engn, 161 Louis Pasteur, Ottawa, ON, Canada
[2] Univ Ottawa, Dept Chem & Biomol Sci, 150 Louis Pasteur, Ottawa, ON, Canada
[3] Univ Ottawa, Dept Biol, 30 Marie Curie, Ottawa, ON, Canada
[4] Univ Ottawa, Heart Inst, 40 Ruskin St, Ottawa, ON, Canada
[5] Univ Ottawa, Sch Elect Engn & Comp Sci, 800 King Edward Ave, Ottawa, ON, Canada
来源
MATERIALS ADVANCES | 2023年 / 4卷 / 20期
基金
加拿大自然科学与工程研究理事会;
关键词
ORGANIC SEMICONDUCTORS; POLYMER; AMBIPOLAR; DOPANT;
D O I
10.1039/d3ma00402c
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To achieve commercialization of organic electronics, the field must see an improvement in both performance and material stability while maintaining a low cost of fabrication. To achieve this, low-cost additives provide a viable solution. A variety of additives containing amine and silane functional groups were tested to determine their impact on the performance and air-stability of n-type semiconductor poly{[N,N & PRIME;-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5 & PRIME;-(2,2 & PRIME;-bithiophene)} (P(NDI2OD-T2)) in organic thin film transistors. Aniline and pyridine were found to both have a minimal impact on P(NDI2OD-T2) performance in an inert environment, but to improve stability of electron mobility and threshold voltage in air. Therefore, these compounds, or other compounds based on their structure, would be ideal candidates as additives for the improvement of n-type transistors.
引用
收藏
页码:4707 / 4711
页数:6
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