Electrochemical investigation of niobium doped nickel selenide nanostructure for supercapacitor devices

A significant challenge in the research and development of supercapacitors is the creation of nanoscale structures in metal chalcogenide with improved chemically active surfaces, faster ion/charge transport kinetics and shorter ion-diffusion routes. A metal doping strategy has successfully resolved the transition metal chalcogenides issue and provides a larger surface area, faster migration of ions and good thermal and structural stability. In this study, a series of nanostructures comprising pure NiSe and Nb doped NiSe are synthesized across various compositions. Systematic research has been carried out to ascertain the impact of doping on physical and electrochemical traits. Using the X-ray diffraction (XRD) analysis, the confirmation of phase purity was accomplished. The morphology of the nanostructures underwent a dramatic change, as shown by the use of scanning electron microscope (SEM) technology. The specific capacitance (Cs) of Nb0.06NS is measured to be 1482 F/g at 1 A/g. Additionally, cyclic voltammetry (CV) study suggests that the nanostructures obtained in their original state exhibit pseudocapacitive behavior. The GCD of Nb0.06NS demonstrated exceptional charging/ discharging performance, showing greater stability and rate capability. Specifically, after undergoing the 5000th GCD cycle, the GCD displayed outstanding performance, and after the 5000th GCD cycle, it retained 96.62 % of its initial performance. Numerous studies have revealed that nanoflakes with extremely high capacitance and stability make excellent candidates for usage as supercapacitor component parts.