A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter

被引：1
作者：
Guan, Guanghao [1 ]
Chen, Jingxiong [2 ]
Liu, Xiaoyi [2 ]
Wang, Hong [1 ,3 ]
机构：
[1] South China Univ Technol, Sch Phys & Optoelect, Engn Res Ctr Optoelect Guangdong Prov, Guangzhou 510640, Peoples R China
[2] South China Univ Technol, Sch Elect & Informat Engn, Engn Res Ctr Optoelect Guangdong Prov, Guangzhou 510640, Peoples R China
[3] South China Univ Technol, Zhongshan Inst Modern Ind Technol, Zhongshan 528437, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2023年 / 11卷
关键词：
Bandpass filter (BPF); coplanar waveguide; defect structure; GaN-on-Si; on-chip;
D O I：
10.1109/JEDS.2023.3314838
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose a low loss and high selectivity bandpass filter with defected structure on GaN-on-Silicon. GaN-on-Si exhibits a high insertion loss due to the presence of parasitic channels at the AlN/Si interface. It is necessary to strengthen the coupling between the resonators to achieve a low loss. However, this results in weaker suppression of adjacent channels and lower selectivity of frequencies. The designed filter consists of square spiral defect structure resonators and a step impedance resonator, which provides tunable transmission zero and facilitates the adjustment of pass band. With an interdigitated capacitor, at a frequency span from 3.3 to 4.9 GHz, the proposed filter has a low insertion loss of 2.71dB and improves the suppression of adjacent channel (5.8 GHz) by 11.2 dB compared to the traditional SIR filter. The out-of-band suppression of the filter is better than 15.93 dB at 20 GHz. Compared to the traditional SIR filter, the proposed filter achieves a steep transition zone, and an out-of-band rejection reduction by at least 6.6 dB.
引用
收藏
页码：503 / 509
页数：7
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