Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

被引：5

作者：

Fang, Xuzhou ^{[1
]}

Wang, Jiaming ^{[1
]}

Xu, Fujun ^{[1
]}

Zhang, Lisheng ^{[1
,2
]}

Lang, Jing ^{[1
]}

Zhang, Ziyao ^{[1
]}

Tan, Fuyun ^{[1
]}

Yang, Xuelin ^{[1
]}

Kang, Xiangning ^{[1
]}

Qin, Zhixin ^{[1
,2
]}

Tang, Ning ^{[1
]}

Wang, Xinqiang ^{[1
,3
,4
]}

Ge, Weikun ^{[1
]}

Shen, Bo ^{[1
,3
,4
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop Ph, Beijing 100871, Peoples R China

[2] Beijing SinoGaN Semicond Technol Co Ltd, Beijing 101399, Peoples R China

[3] Peking Univ, Nanooptoelectron Frontier Ctr, Minist Educ, Beijing 100871, Peoples R China

[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2024年 / 124卷 / 06期

基金：

中国国家自然科学基金;

关键词：

NANO-PATTERNED SAPPHIRE; SPUTTER-DEPOSITED ALN; LIGHT-EMITTING DIODE; HIGH-QUALITY ALN; EPITAXY; FILMS;

D O I：

10.1063/5.0184353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of spiral hillocks during AlGaN growth is investigated by modulating the residual strain in the underlying AlN templates. It is demonstrated that the high-density hillocks are directly related to the compressive stress, in particular for AlGaN on high-temperature annealed (HTA) AlN. AlN/AlGaN stress modulation multilayer is then introduced and optimized before AlGaN growth, which is revealed to be helpful to release the compressive stress in AlGaN as well as to suppress the hillocks. Eventually, the hillocks in AlGaN/HTA-AlN are eliminated, leading to a great improvement of yield for deep-ultraviolet light-emitting diode (DUV-LED) wafers. This work will definitely promote further industrial development and application of DUV-LEDs.

引用

页数：6

共 30 条

[1] The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing [J].

Ben, Jianwei ;

Shi, Zhiming ;

Zang, Hang ;

Sun, Xiaojuan ;

Liu, Xinke ;

Lu, Wei ;

Li, Dabing .

APPLIED PHYSICS LETTERS, 2020, 116 (25)

[2] The role of surface kinetics on composition and quality of AlGaN [J].

Bryan, Isaac ;

Bryan, Zachary ;

Mita, Seiji ;

Rice, Anthony ;

Hussey, Lindsay ;

Shelton, Christopher ;

Tweedie, James ;

Maria, Jon-Paul ;

Collazo, Ramon ;

Sitar, Zlatko .

JOURNAL OF CRYSTAL GROWTH, 2016, 451 :65-71

[3] Hillock Related Degradation Mechanism for AlGaN-Based UVC LEDs [J].

Chen, Juntong ;

Liu, Jianxun ;

Huang, Yingnan ;

Liu, Ruisen ;

Dai, Yayu ;

Tang, Leming ;

Chen, Zheng ;

Sun, Xiujian ;

Liu, Chenshu ;

Zhang, Shuming ;

Sun, Qian ;

Feng, Meixin ;

Xu, Qiming ;

Yang, Hui .

NANOMATERIALS, 2023, 13 (09)

[4] 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates [J].

Dong, Peng ;

Yan, Jianchang ;

Wang, Junxi ;

Zhang, Yun ;

Geng, Chong ;

Wei, Tongbo ;

Cong, Peipei ;

Zhang, Yiyun ;

Zeng, Jianping ;

Tian, Yingdong ;

Sun, Lili ;

Yan, Qingfeng ;

Li, Jinmin ;

Fan, Shunfei ;

Qin, Zhixin .

APPLIED PHYSICS LETTERS, 2013, 102 (24)

[5] AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs [J].

Hagedorn, Sylvia ;

Knauer, Arne ;

Mogilatenko, Anna ;

Richter, Eberhard ;

Weyers, Markus .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (12) :3178-3185

[6] Ultraviolet light-emitting diodes based on group three nitrides [J].

Khan, Asif ;

Balakrishnan, Krishnan ;

Katona, Tom .

NATURE PHOTONICS, 2008, 2 (02) :77-84

[7] The emergence and prospects of deep-ultraviolet light-emitting diode technologies [J].

Kneissl, Michael ;

Seong, Tae-Yeon ;

Han, Jung ;

Amano, Hiroshi .

NATURE PHOTONICS, 2019, 13 (04) :233-244

[8] Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate [J].

Kushimoto, Maki ;

Zhang, Ziyi ;

Honda, Yoshio ;

Schowalter, Leo J. ;

Sasaoka, Chiaki ;

Amano, Hiroshi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (01)

[9] AlGaN photonics: recent advances in materials and ultraviolet devices [J].

Li, Dabing ;

Jiang, Ke ;

Sun, Xiaojuan ;

Guo, Chunlei .

ADVANCES IN OPTICS AND PHOTONICS, 2018, 10 (01) :43-110

[10] Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing [J].

Miyake, Hideto ;

Lin, Chia-Hung ;

Tokoro, Kenta ;

Hiramatsu, Kazumasa .

JOURNAL OF CRYSTAL GROWTH, 2016, 456 :155-159

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