Theoretical Research and Photodynamic Simulation of Aggregation-Induced Thermally Activated Delayed Fluorescence Materials for Organic Light-Emitting Diodes

被引:1
作者
Hao, Xue-Li [1 ]
Ren, Ai-Min [2 ]
Zhou, Liang [1 ]
Zhang, Hongjie [1 ]
机构
[1] Chinese Acad Sci, State Key Lab Rare Earth Resource Utilizat, Changchun Inst Appl Chem, Changchun 130022, Peoples R China
[2] Jilin Univ, Inst Theoret Chem, Coll Chem, Lab Theoret & Computat Chem, Changchun 130023, Peoples R China
关键词
EFFICIENCY ROLL-OFF; HIGHLY EFFICIENT; MOLECULAR DESIGN; INDUCED EMISSION; EXCITED-STATES; SPIN-ORBIT; SINGLET; DECAY; ELECTROLUMINESCENCE; PHOSPHORESCENCE;
D O I
10.1021/acs.jpca.3c06145
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The discovery and utilization of pure organic thermally activated delayed fluorescence (TADF) materials provide a major breakthrough in obtaining high-performance and low-cost organic light-emitting diodes (OLEDs). In spite of recent research progress in TADF emitters, highly efficient and stable TADF emitters in high-concentration solutions and in the solid state have been rarely reported, and most of them suffer from aggregation-induced quenching (ACQ). To resolve this issue, the aggregation-induced delayed fluorescence (AIDF) mechanism was studied in depth by the simulation of excited-state dynamic processes, and the effect of geometric modifications on optical properties was minutely investigated based on molecular modeling. TD-DFT calculations demonstrate that it is the key point for the transformation between prompt fluorescence and TADF to effectively regulate singlet-triplet energy difference and electron-vibration coupling by the aggregation effect. Then, excellent green and red TADF materials with very small singlet-triplet energy differences of 0.05 and 0.06 eV, high TADF quantum yields up to 57.53% and 39.19%, and suitable fluorescence lifetimes of 0.99 and 1.67 us, respectively, were designed and obtained, which demonstrate the potential application of these two TADF materials in OLEDs.
引用
收藏
页码:9771 / 9780
页数:10
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