Effect of Dummy Gate Bias on Breakdown Voltage and Gate Charge of a Novel In0.53Ga0.47As/InP Trench-Gate Pentode Power Device

被引：1
作者：
Sahoo, Jagamohan [1 ]
Mahapatra, Rajat [1 ]
机构：
[1] Natl Inst Technol Durgapur, Dept Elect & Commun Engn, Durgapur 852859, India
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2023年 / 23卷 / 02期
关键词：
Logic gates; MOSFET; Materials reliability; Indium phosphide; III-V semiconductor materials; Tunneling; Impact ionization; uDmmy gate; reliability; InGaAs; InP; trenchgate; power MOSFET; ON-RESISTANCE; PERFORMANCE; MOSFET; OPTIMIZATION; IMPACT;
D O I：
10.1109/TDMR.2023.3268163
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, the effect of dummy gate bias of a novel In0.53Ga0.47As/InP heterostructure trench-gate pentode power device is investigated by TCAD simulations. The dummy gate relaxes the electric field at the main trench-gate corner and increases the Off-State breakdown voltage (VBR) of the optimized device for improved reliability. It is shown that the device offers a 27.4% and 16% increase in VBR compared with the conventional silicon-based trench-gate device and the In0.53Ga0.47As/InP heterostructure trench-gate device without the dummy gate respectively. We demonstrate that the use of a dummy gate within the high-field, wide bandgap region reduces the Off-State leakage current in InGaAs/InP MOSFET. The proposed pentode device has a lower feedback capacitance and a 91.9% decrease in the gate to drain charge (QGD), thus reducing the switching loss. It is thereby improving the static figure of merit (FOM) V2BR/RON (here RON is the ON-resistance) by 19x and reducing the dynamic FOM RONxQGD by 151x, respectively, for power switching application.
引用
收藏
页码：269 / 275
页数：7
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