Semi-classical physics based model in AlGaN/BGaN based ultraviolet LED with p-AlGaN layer sandwiched around electron-blocking layer for droop-free efficiency

This work reports the droop-free efficiency of an Ultraviolet Light Emitting Diode (UV LED) of a Multiple Quantum Well (MQW) with an Electron Blocking Layer (EBL) sandwiched with a pAlGaN layer. In the proposed device structure, the BGaN Quantum Well's thickness and boron content are set at 3 nm and 10%, respectively. The simulation is carried out by using various physical models such as K.P. model, Auger recombination model, Shcokley-Reed-Hall (SRH) recombination model, and Lorentz model to produce realistic optical performances. Internal Quantum Efficiency, Output Luminous power, and radiative recombination rate are the variables examined in this study. The addition of a thin p-AlGaN layer reduces the polarization effect, which in turn minimizes electron leakage to the p-type layer while increasing the effectiveness of hole injection via intra-band tunneling. A semi-classical physics-based model is developed to comprehend the effect of radiative and non-radiative recombination mechanisms. It is discovered that the simulated results and modeled results match quite well.