Effects of Boron Doping into GaSe Semiconductor Crystals on Optical Limiting and Two Photon Absorption Properties

Pure GaSe and 0.1%, 0.5% and 1% boron doped GaSe crystals were grown using vertical Bridgman-Stockbarger method. Two photon absorption and optical limiting properties of semiconductor crystals were investigated using open aperture Z-scan experimental setup. It has been observed that GaSe semiconductor crystals grown at different boron doping ratios exhibit two photon absorption and optical limiting behaviors at 1064 nm wavelength and 4 nanosecond pulse duration. It is concluded that the two photon absorption properties of semiconductor crystals increase with the percentage of boron doping. Among the studied semiconductor crystals, it was observed that 1% boron doped GaSe crystal demonstrated the best optical limiting behavior at low input flux value. According to the open aperture Z-scan experimental results, it was concluded that the two photon absorption and optical limiting properties of semiconductor crystals can be controlled by the doping ratio of boron atoms into the crystal.