Complex dielectric function of thiazolothiazole thin films determined by spectroscopic ellipsometry

被引:4
作者
Shuchi, Nuren [1 ]
Mower, Jackson [2 ]
Stinson, V. Paige [1 ]
Mclamb, Micheal J. [1 ]
Boreman, Glenn D. [1 ]
Walter, Micheal G. [2 ]
Hofmann, Tino [1 ]
机构
[1] Univ N Carolina, Dept Phys & Opt Sci, 9201 Univ City Blvd, Charlotte, NC 28223 USA
[2] Univ N Carolina, Dept Chem, 9201 Univ City Blvd, Charlotte, NC 28223 USA
基金
美国国家卫生研究院; 美国国家科学基金会;
关键词
OPTICAL-PROPERTIES; EFFICIENT;
D O I
10.1364/OME.487598
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, the complex dielectric function of 2,5-bis(N,N-dibutyl-4-aminophenyl) thiazolo[5,4-d]thiazole is reported. Thin films of this material were obtained by spin coating on a silicon substrate. The samples were investigated using spectroscopic ellipsometry in the spectral range from 354 nm to 1907 nm at multiple angles of incidence. The ellipsometric data were analyzed using a stratified-layer model composed of a thiazolothiazole thin film, a native SiO2 oxide, and a Si substrate. The model dielectric function of the thiazolothiazole thin film was modeled using a series of Tauc-Lorentz and Gaussian oscillators. The best-model calculated data reproduces the experimental data very well. The bandgap of TTz is reported and found to be in good agreement with density functional theory calculations reported earlier. & COPY; 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:1589 / 1595
页数:7
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