Hysteresis in three-dimensional multi-layer molecularly thin-film lubrication

被引:0
作者
Wu, Zuo-Bing [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Mech, LNM, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100049, Peoples R China
来源
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS | 2023年 / 237卷 / 06期
基金
中国国家自然科学基金;
关键词
friction; hysteresis; multiscale modeling; shear stress; thin-film lubrication; FRICTION; SIMULATION; TRIBOLOGY; RHEOLOGY; DYNAMICS;
D O I
10.1515/zpch-2023-0220
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
For three-dimensional multi-layer molecularly thin-film lubrication system with elastic substrates, roles of hysteresis on tribological properties are investigated by using the multiscale simulation method. It is found that multiple stick-slip transitions with/without hysteresis loops appear in a sliding process and form a quasi-periodic progress with lattice distance. For the few-/multi-layer thin-film lubrication system, as the load increases, the hysteresis length monotonously increases/tends to keep constant. The hysteresis is mainly caused by the relaxation of metastable states of solid atoms in the elastic substrates, which delays the system back to its equilibrium states. In the quasi-periodic shearing progress, the effective elastic coefficients and the hysteresis lengths approximately remain unchanged, which reveals that although the hysteresis loops with the same lengths appear in the sliding process, the total systematic energy is still conserved. These findings not only provide a profound understanding of roles of hysteresis in the thin-film lubrication system but also show the effects of film layers and loads on the systematic tribological properties, which are of great significance for practical applications.
引用
收藏
页码:737 / 763
页数:27
相关论文
共 50 条
  • [21] Three-dimensional grain growth during multi-layer printing of a nickel-based alloy Inconel 718
    Wei, H. L.
    Knapp, G. L.
    Mukherjee, T.
    DebRoy, T.
    ADDITIVE MANUFACTURING, 2019, 25 : 448 - 459
  • [22] Influence of electric double layer on thin film lubrication and elastohydrodynamic lubrication
    Huang, P
    Wong, PL
    Meng, YG
    SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2001, 44 : 70 - 77
  • [23] Study on lubrication characteristics of multi-layer structure hinge under the influence of clearance dynamic
    Zhai, Fugang
    Huang, Weijie
    Xing, Yangtao
    Wang, Yanzhe
    PHYSICS OF FLUIDS, 2024, 36 (11)
  • [24] Modified Reynolds Equations for Thin Film Lubrication with Saturated High-Viscosity Surface Layer and Lubrication Analysis of Tapered Pad Bearing
    Ono, Kyosuke
    TRIBOLOGY ONLINE, 2022, 17 (03): : 207 - 215
  • [25] Numerical Simulation of Rough Thrust Pad Bearing Under Thin-Film Lubrication Using Variable Mesh Density
    Kumar, Rahul
    Ghosh, Subrata Kumar
    Azam, Mohammad Sikandar
    Khan, Hasim
    IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY-TRANSACTIONS OF MECHANICAL ENGINEERING, 2020, 44 (02) : 443 - 464
  • [26] Understanding the facet formation mechanisms of Si thin-film solidification through three-dimensional phase-field modeling
    Chen, G. Y.
    Lan, C. W.
    JOURNAL OF CRYSTAL GROWTH, 2017, 474 : 166 - 170
  • [27] A PHYSICAL MODEL FOR THE ELECTRICAL HYSTERESIS OF THIN-FILM FERROELECTRIC CAPACITORS
    BRENNAN, CJ
    FERROELECTRICS, 1992, 132 (1-4) : 245 - 257
  • [28] Suppression of current hysteresis in carbon nanotube thin-film transistors
    Tsukagoshi, Kazuhito
    Sekiguchi, Masahiro
    Ayagi, Yoshinobu
    Kanbara, Takayoshi
    Takenobu, Taishi
    Iwasa, Yoshihiro
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (20-24): : L571 - L573
  • [29] Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor
    Vidor, F. F.
    Wirth, G.
    Assion, F.
    Wolff, K.
    Hilleringmann, U.
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2013, 12 (03) : 296 - 303
  • [30] Hysteresis in pentacene-based organic thin-film transistors
    Gu, Gong
    Kane, Michael G.
    ORGANIC FIELD-EFFECT TRANSISTORS V, 2006, 6336