Impact of Current on the Parallel Resistance and Junction Capacitance of Light-Emitting Diodes

被引：0

作者：

Zhong, Chenming ^{[1
,2
]}

Lu, Yijun ^{[1
,2
]}

Fan, Xiaotong ^{[1
,2
]}

Chen, Guolong ^{[1
,2
]}

Gao, Yulin ^{[1
,2
]}

Zhu, Lihong ^{[1
,2
]}

Wang, Yong ^{[3
]}

Zhao, Lihong ^{[3
]}

Yang, Sihua ^{[3
]}

Wang, Liqiang ^{[3
]}

Chen, Zhong ^{[1
,2
]}

Guo, Weijie ^{[1
,2
]}

机构：

[1] Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Natl Innovat Platform Fus Ind & Educ Integrated Ci, Xiamen 361005, Peoples R China

[2] Xiamen Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China

[3] AOTO Elect Co Ltd, Shenzhen 518052, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Light emitting diodes; Resistance; Capacitance; Impedance; Current measurement; Voltage measurement; Junctions; I-V characteristic; junction capacitance; light-emitting diodes (LEDs); parallel resistance; BANDWIDTH;

D O I：

10.1109/TED.2023.3296072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of the parallel resistance and junction capacitance (PRJC) of tricolor light-emitting diodes (LEDs) driven by periodic pulse currents were investigated, revealing that as the drive current increases, the parallel resistance decreases while the junction capacitance increases. The product of PRJC tends to decrease with increasing pulsewidth or amplitude of the driving current. The impedance spectra of LEDs were employed to extract the PRJC. When the voltage is close to the threshold, the parallel resistance dominates; however, the series resistance becomes dominant when the voltage exceeds the threshold. The impact of the parallel resistance on the I-V relationship cannot be ignored when LEDs operate under low-frequency pulse current and low current conditions.

引用

页码：316 / 321

页数：6

共 50 条

[31] LIGHT-EMITTING DIODES
THOMAS, DG
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (09) : 621 - &
[32] LIGHT-EMITTING DIODES
BERGH, AA
DEAN, PJ
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 156 - +
[33] Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method
Wu, Biqing
Lin, Siqi
Shih, Tien-Mo
Gao, Yulin
Lu, Yijun
Zhu, Lihong
Chen, Guolong
Chen, Zhong
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 241 - 245
[34] Light-emitting diodes
不详
ITE JOURNAL-INSTITUTE OF TRANSPORTATION ENGINEERS, 1996, 66 (12): : 23 - 23
[35] Thermal analyses of alternating current light-emitting diodes
Zhang, Ji-Hong
Wu, Bi-Qing
Shih, Tien-Mo
Lu, Yi-Jun
Gao, Yu-Lin
Chang, Richard Ru-Gin
Chen, Zhong
APPLIED PHYSICS LETTERS, 2013, 103 (15)
[36] Modeling and Characterization of Organic Light-Emitting Diodes Including Capacitance Effect
Bender, Vitor C.
Barth, Norton D.
Mendes, Fernanda B.
Pinto, Rafael A.
Marcos Alonso, J.
Marchesan, Tiago B.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) : 3314 - 3321
[37] Stable economical current modulator for light-emitting diodes
Varenik, A.G.
Zhurin, A.A.
Instruments and experimental techniques New York, 1988, 31 (3 pt 2): : 699 - 700
[38] Proposal of New Thermal Resistance for Light-Emitting Diodes
Ma, Byungjin
Lee, Kwanhoon
2013 19TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC), 2013, : 339 - +
[39] Space charges and negative capacitance effect in organic light-emitting diodes by transient current response analysis
Guan, Min
Niu, Litao
Zhang, Yang
Liu, Xingfang
Li, Yiyang
Zeng, Yiping
RSC ADVANCES, 2017, 7 (80): : 50598 - 50602
[40] Fabrication and Characterization of Multiquantum Shell Light-Emitting Diodes with Tunnel Junction
Murakami, Hideki
Suzuki, Atsushi
Nokimura, Kyohei
Takebayashi, Minoru
Goto, Nanami
Terazawa, Mizuki
Lu, Weifang
Sone, Naoki
Iida, Kazuyoshi
Ohya, Masaki
Kamiyama, Satoshi
Takeuchi, Tetsuya
Iwaya, Motoaki
Akasaki, Isamu
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (07):

← 1 2 3 4 5 →