A High Power Density SiC MOSFET Inverter Design and Thermal Validation for EV Traction Application

This paper addresses the design procedures and challenges of developing compact, high-density inverters by fabricating a half-bridge module using PCB-embedded technology. The modules are constructed by placing 1.2 kV, 100 A MOSFET dies in the inner layers of the PCB, and the electrical connection for the dies is achieved using copper layers and micro-vias. The electrothermal analysis performed using ANSYS Electromagnetic suite demonstrates a low parasitic power loop inductance of 4.25 nH and a junction temperature of less than 140 degrees C, indicating the efficacy of the design. A thermal test bench was set up, to validate the thermal simulation results.