Annealing temperature effects on the size and band gap of ZnS quantum dots fabricated by co-precipitation technique without capping agent

被引:23
作者
Alwany, Abduelwhab. B. [1 ,2 ]
Youssef, G. M. [2 ]
Samir, O. M. [1 ,3 ]
Algradee, Mohammed A. [1 ]
Yahya, Nabil A. A. [4 ,5 ]
Swillam, Mohamed A. [5 ]
Humaidi, Syahrul [6 ]
Abd-Shukor, R. [7 ]
机构
[1] Ibb Univ, Dept Phys, Fac Sci, Ibb, Yemen
[2] Ain Shams Univ, Dept Phys, Lab Mat Sci & Solar Cells, Fac Sci, Cairo, Egypt
[3] Aljanad Univ Sci & Technol, Engn Coll, Taizi, Yemen
[4] Thamar Univ, Dept Phys, Thamar, Yemen
[5] Amer Univ Cairo, Sch Sci & Engn, Dept Phys, Cairo 11835, Egypt
[6] Univ Sumatera Utara, Post Grad Program Phys, FMIPA, Jln Bioteknol 1, Medan 20155, Indonesia
[7] Univ Kebangsaan Malaysia, Dept Appl Phys, Bangi 43600, Selangor, Malaysia
关键词
OPTICAL-PROPERTIES; THIN-FILMS; NANOPARTICLES; NANOSTRUCTURES; PHOTOLUMINESCENCE; FERROMAGNETISM; DEGRADATION; MN;
D O I
10.1038/s41598-023-37563-6
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
ZnS quantum dots (QDs) were fabricated using the co-precipitation technique with no capping agent. The effects of different annealing temperatures (non-annealed, 240 degrees C and 340 degrees C for 2 h) on the structural and optical characteristics of ZnS QDs are reported. The samples were examined by XRD, TEM, PL, FTIR, and UV-Vis. An increase in annealing temperature led to an increase in the dot size and a lowering of the energy band gap (E-G). The average crystallite size, D of ZnS was between 4.4 and 5.6 nm. The ZnS QDs showed a band gap of 3.75, 3.74 and 3.72 eV for non-annealed, 240 degrees C, and 340 degrees C annealed samples. The reflection spectra increased in the visible light and decreased in UV region with an increase in annealing temperature. This work showed that the band gap and size of ZnS QDs could be tuned by varying the annealing temperature.
引用
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页数:10
相关论文
共 38 条
[1]   The effect of composition on structural and optical properties of ZnSe alloys [J].
Abdel-Rahim, M. A. ;
Hafiz, M. M. ;
Alwany, A. Elwhab B. .
OPTICS AND LASER TECHNOLOGY, 2013, 47 :88-94
[2]   Influence of annealing on the structure and optical properties of Zn40Se60 thin films [J].
Abdel-Rahim, M. A. ;
Hafiz, M. M. ;
Elwhab, A. ;
Alwany, B. .
OPTICS AND LASER TECHNOLOGY, 2012, 44 (04) :1116-1121
[3]   Effect of Li+ concentration on the structural and optical properties of chemically synthesized ZnS nanoparticles [J].
Alwany, Abduelwhab B. ;
Alnakhlani, Ali ;
Youssef, G. M. ;
Algradee, Mohammed A. ;
Hassan, Belqees .
RESULTS IN OPTICS, 2023, 12
[4]   Structural, optical and radiation shielding properties of ZnS nanoparticles QDs [J].
Alwany, B. Abduelwhab ;
Youssef, G. M. ;
Saleh, Emran Eisa ;
Samir, O. M. ;
Algradee, A. Mohammed ;
Alnehia, Adnan .
OPTIK, 2022, 260
[5]  
Alwanya B., 2023, J. Mater. Sci, V34, P1
[6]   Influence of thickness on the microstructural, optoelectronic and morphological properties of nanocrystalline ZnSe thin films [J].
Balu, A. R. ;
Nagarethinam, V. S. ;
Ahamed, M. G. Syed Basheer ;
Thayumanavan, A. ;
Murali, K. R. ;
Sanjeeviraja, C. ;
Swaminathan, V. ;
Jayachandran, M. .
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 171 (1-3) :93-98
[8]   In-doped ZnS nanoparticles: structural, morphological, optical and antibacterial properties [J].
Dhupar, Anu ;
Kumar, Suresh ;
Tuli, Hardeep Singh ;
Sharma, Anil Kumar ;
Sharma, Vandana ;
Sharma, Jatinder Kumar .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2021, 127 (04)
[9]   ZnS nanostructures: From synthesis to applications [J].
Fang, Xiaosheng ;
Zhai, Tianyou ;
Gautam, Ujjal K. ;
Li, Liang ;
Wu, Limin ;
Bando, Yoshio ;
Golberg, Dmitri .
PROGRESS IN MATERIALS SCIENCE, 2011, 56 (02) :175-287
[10]   ZnO and ZnS Nanostructures: Ultraviolet-Light Emitters, Lasers, and Sensors [J].
Fang, Xiaosheng ;
Bando, Yoshio ;
Gautam, Ujjal K. ;
Zhai, Tianyou ;
Zeng, Haibo ;
Xu, Xijin ;
Liao, Meiyong ;
Golberg, Dmitri .
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2009, 34 (3-4) :190-223