Atomic-Layer Engineering of La2-xSrxCuO4-La2-xSrxZnO4 Heterostructures

被引:1
作者
Xu, Xiaotao [1 ,2 ]
He, Xi [1 ,3 ,4 ]
Bollinger, Anthony T. [1 ]
Shi, Xiaoyan [2 ]
Bozovic, Ivan [1 ,3 ,4 ]
机构
[1] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Div, Upton, NY 11973 USA
[2] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
[3] Yale Univ, Dept Chem, New Haven, CT 06520 USA
[4] Yale Univ, Energy Sci Inst, West Haven, CT 06516 USA
关键词
nanoengineering; superconductivity; cuprates; oxide molecular beam epitaxy; GRAIN-BOUNDARIES; (LA; SR)(2)CUO4; JUNCTIONS; SURFACE; GROWTH; OXIDES; STATE; FILMS; TILT;
D O I
10.3390/nano13152207
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The fabrication of trilayer superconductor-insulator-superconductor (SIS) Josephson junctions with high-temperature superconductor (HTS) electrodes requires atomically perfect interfaces. Therefore, despite great interest and efforts, this remained a challenge for over three decades. Here, we report the discovery of a new family of metastable materials, La2-xSrxZnO4 (LSZO), synthesized by atomic-layer-by-layer molecular beam epitaxy (ALL-MBE). We show that LSZO is insulating and epitaxially compatible with an HTS compound, La2-xSrxCuO4 (LSCO). Since the "parent" compound La2ZnO4 (LZO) is easier to grow, here we focus on this material as our insulating layer. Growing LZO at very low temperatures to reduce cation interdiffusion makes LSCO/LZO interfaces atomically sharp. We show that in LSCO/LZO/LSCO trilayers, the superconducting properties of the LSCO electrodes remain undiminished, unlike in previous attempts with insulator barriers made of other materials. This opens prospects to produce high-quality HTS tunnel junctions.
引用
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页数:12
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