Temperature Measurement Method Using FET Type Gas Sensor

被引：0

作者：

Lee, Chayoung ^{[1
,2
,3
]}

Jung, Gyuweon ^{[1
,2
]}

Shin, Wonjun ^{[1
,2
]}

Jeong, Yujeong ^{[1
,2
]}

Park, Jinwoo ^{[1
,2
]}

Kim, Donghee ^{[1
,2
]}

Kim, Jae-Joon ^{[1
,2
]}

Lee, Jong-Ho ^{[1
,2
,4
,5
]}

机构：

[1] Seoul Natl Univ, Sch ECE, Seoul, South Korea

[2] Seoul Natl Univ, ISRC, Seoul, South Korea

[3] SK Hynix, CIS Business, Icheon, South Korea

[4] Minist Sci, Sejong, South Korea

[5] ICT, Sejong, South Korea

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

Temperature measurement; FET type gas sensor; CMOS process; MOSFET;

D O I：

10.1109/JCS57290.2023.10102965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we propose the method about temperature measurement using transient behaviors of FET-type gas sensors based on MOSFET. The proposed sensor was manufactured using the CMOS process, and has a floating gate, p-type buried channel, control-gate, and WO3. Through appropriate pulse time and bias control, it was possible to confirm the response more than 5 times according to the temperature change from 25 degrees C to 45 degrees C.

引用

页数：3

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