共 35 条
Photomultiplication-Type Organic Photodetectors with High EQE-Bandwidth Product by Introducing a Perovskite Quantum Dot Interlayer
被引:24
作者:

Jeong, Minyoung
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Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea

Han, Se Gyo
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Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea

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Min, Jiwoo
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Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea

Kim, Mi Kyong
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Jeonbuk Natl Univ, Grad Sch Integrated Energy AI, Jeonju 54896, South Korea Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea

Choi, Wookjin
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Kyoto Univ, Grad Sch Engn, Div Mol Engn Program, Inuyama 6068501, Japan Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea

Lee, Hansol
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Gachon Univ, Dept Chem & Biol Engn, Seongnam 13120, South Korea Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea

Lee, Dongki
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Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea

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Cho, Kilwon
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机构:
Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea
机构:
[1] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea
[2] Jeonbuk Natl Univ, Grad Sch Integrated Energy AI, Jeonju 54896, South Korea
[3] Kyoto Univ, Grad Sch Engn, Div Mol Engn Program, Inuyama 6068501, Japan
[4] Gachon Univ, Dept Chem & Biol Engn, Seongnam 13120, South Korea
[5] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea
基金:
新加坡国家研究基金会;
关键词:
ion migration;
organic photodetectors;
perovskite quantum dots;
photomultiplication;
CHARGE ACCUMULATION;
NANOCRYSTALS;
PERFORMANCE;
D O I:
10.1002/adfm.202300695
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
A photomultiplication (PM)-type organic photodetector (OPD) that exploits the ionic motion in CsPbI3 perovskite quantum dots (QDs) is demonstrated. The device uses a QD monolayer as a PM-inducing interlayer and a donor-acceptor bulk heterojunction (BHJ) layer as a photoactive layer. When the device is illuminated, negative ions in the CsPbI3 QD migrate and accumulate near the interface between the QDs and the electrode; these processes induce hole injection from the electrode and yield the PM phenomenon with an external quantum efficiency (EQE) >2000% at a 3 V applied bias. It is confirmed that the ionic motion of the CsPbI3 QDs can induce a shift in the work function of the QD/electrode interface and that the dynamics of ionic motion determines the response speed of the device. The PM OPD showed a large EQE-bandwidth product >10(6) Hz with a -3 dB frequency of 125 kHz at 3 V, which is one of the highest response speeds reported for a PM OPD. The PM-inducing strategy that exploits ionic motion of the interlayer is a potential approach to achieving high-efficiency PM OPDs.
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