共 7 条
A 28 GHz fully integrated GaN enhanced single-sideband time-modulated MMIC for phased array system
被引:3
作者:
Cao, Hanzhang
[1
]
Hu, Chun
[1
]
Guo, Runnan
[2
]
Wu, Xia
[2
]
Wang, Yi
[1
]
Ge, Fengchun
[2
]
Jin, Saisai
[3
]
Wang, Chong
[3
]
Shen, Hongchang
[3
]
Tao, Hongqi
[2
]
Huang, Tongde
[1
]
Wu, Wen
[1
]
机构:
[1] Nanjing Univ Sci & Technol, Ministerial Key Lab JGMT, Nanjing 210094, Peoples R China
[2] Nanjing Elect Devices Inst, Nanjing, Peoples R China
[3] Nanjing Guobo Elect Co Ltd, Nanjing, Peoples R China
关键词:
5G communication;
gallium nitride (GaN);
monolithic microwave integrated circuit (MMIC);
RF front-end module;
time-modulated phased array;
D O I:
10.1002/mop.33729
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper presents a 28 GHz GaN enhanced single-sideband time-modulated phased array (ESTMPA), based on a monolithic microwave integrated circuit (MMIC), including both a time-modulated circuit and an RF front-end module (FEM). The time-modulated circuit mainly consists of a numerically controlled attenuator to balance the amplitude, compact phase shifters to generate balanced signals, a reconfigurable power divider, and a quadrature power divider. The FEM mainly consists of a low noise amplifier and a power amplifier, featuring codesign of input/output networks. Based on the in-phase/quadrature (I/Q) composite modulation technique, a stepped modulation waveform, realized by the time-modulated circuit, is used to enable a weighted array of phases. This helps generate a scanned beam at the first positive sideband and eliminate the undesired sidebands. The final MMIC-based four-element ESTMPA shows a relative suppression level of -16 dB at the positive fifth sideband and -13 dB at the zeroth sideband, and a much higher level at the other undesired sidebands. As a result, a wider signal bandwidth and a higher harmonic efficiency are achieved. In addition, the ESTMPA shows a beam sweeping angle from -30 degrees to 30 degrees in far-field measurement.
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页码:2543 / 2548
页数:6
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