Development of electrocaloric effect in BT-based lead-free ceramic via density adjustment strategy

被引:2
|
作者
Chen, Kui [1 ,2 ]
Yang, Chengtao [1 ,2 ]
Ma, Jian [3 ]
Zhao, Peng [1 ,2 ,4 ]
Chen, Jingjing [1 ,2 ]
Zheng, Huijing [3 ]
Fang, Zixuan [1 ,2 ]
Tang, Bin [1 ,2 ]
Wu, Bo [3 ]
机构
[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, State Key Lab Elect Thin Films & Integrated Device, Chengdu 611731, Peoples R China
[2] Univ Elect Sci & Technol China, Natl Engn Res Ctr Electromagnet Radiat Control Mat, Chengdu 611731, Peoples R China
[3] Southwest Minzu Univ, Phys Dept, Chengdu 610041, Peoples R China
[4] Taiyuan Univ Technol, Coll Optoelect, Taiyuan 030024, Peoples R China
基金
中国国家自然科学基金;
关键词
BT-based; Density adjustment strategy; Electrocaloric effect; ENERGY-STORAGE PERFORMANCE; FERROELECTRIC CERAMICS; TEMPERATURE-SPAN; STABILITY; STRENGTH;
D O I
10.1016/j.jallcom.2023.171929
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electrocaloric (EC) refrigeration materials have seen significant progress recently, with efficient Barium titanatebased (BT-based) lead-free materials particularly promising for microelectronics applications. However, their performance still lags behind their lead-based counterparts, highlighting the need for further improvements. This study employs a novel density adjustment strategy (DAS) to enhance the EC performance of (0.5-x)BCT-BTZxBST ceramics by carefully balancing the relationships among density, dielectric breakdown strength (BDS), and Delta T. Although Delta T intuitively decreases with increasing density, enhanced BDS can partially compensate for this decrease. An excellent EC performance with Delta T of 2.21 K and Delta T/Delta E of 0.471 K mm kV-1 is obtained in x = 0.5, together with a broader temperature span of 50.3 degrees C near room temperature, which surpasses or is comparable to other lead-free or lead-based ones. The results suggest that the DAS provides a promising approach for developing efficient EC, making speediness of application in EC devices.
引用
收藏
页数:8
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