An N-oxide containing conjugated semiconducting polymer with enhanced electron mobility via direct (hetero)arylation polymerization

In this paper, an N-oxide building block, 4,4 '-dimethyl-[2,2 '-bithiazole] 3,3 '-dioxide (MeBTzO), was designed and synthesized by oxidation of sp(2)-N in the aromatic ring. Theoretical calculation results showed that MeBTzO has higher reactivity than its non-oxide sp(2)-N containing monomer MeBTz in direct (hetero)arylation polymerization (DHAP). Therefore, an N-oxide containing conjugated semiconducting polymer, PDPPMeBTzO, was successfully synthesized via DHAP of MeBTzO with thiophene-flanked diketopyrrolopyrrole (DPP). PDPPMeBTzO possesses a lower lowest unoccupied molecular orbital (LUMO) than the non-oxide analogous polymer PDPPMeBTz, which will facilitate electron injection and transport in organic field-effect transistors (OFETs). As a result, PDPPMeBTzO has obviously enhanced electron transport properties with a higher mu(e) of 0.11 cm(2) V-1 s(-1) compared to PDPPMeBT with a mu(e) of 7.49 x 10(-3) cm(2) V-1 s(-1). Our strategy demonstrated that introducing the N-oxide group in conjugated polymers has great potential for high performance ambipolar and n-type CSP materials.