Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta2O5 Thin Film for Nonvolatile Memory Application

被引：13

作者：

Singh, Elangbam Rameshwar ^{[1
]}

Alam, Mir Waqas ^{[2
]}

Singh, Naorem Khelchand ^{[1
]}

机构：

[1] Natl Inst Technol Nagaland, Dept Elect & Commun Engn, Nagaland 797103, India

[2] King Faisal Univ, Coll Sci, Dept Phys, Al Hasa 31982, Saudi Arabia

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2023年 / 5卷 / 06期

关键词：

Ta2O5; TF; forming-free; nonvolatile memory; retention; endurance; TIO2; DEVICES;

D O I：

10.1021/acsaelm.3c00452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thepresent study reports the presence of capacitive memory andforming-free resistive random access memory (RRAM) in a tantalum pentoxide(Ta2O5) thin film (TF) device. The capacitanceand voltage analysis of the electron-beam evaporated Ta2O5 TF device exhibits three distinct regimes: inversion,depletion, and accumulation, which decrease as the frequency of operationincreases. This behavior is attributed to the interface state density(D (it)) and series resistance (R (s)). Moreover, the memory window of the Ta2O5 device was found to increase from 1.2 (+/- 1 V) to 7.9(+/- 10 V). Furthermore, the resistive switching mechanism wasinvestigated through the current (I) vs voltage (V) measurement for 1000 cycles. The device exhibits abnormalforming-free bipolar resistive switching. In addition, a desirableand stable switching behavior with resistance ratio of 10(2) and a retention up to 10(3) s at +2.5 V was observed. Theoverall findings of the Au/Ta2O5 TF/Si devicecould provide a pave way for nonvolatile memory (NVM) application.

引用

页码：3462 / 3469

页数：8