Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

被引：3
作者：
Liu, Jiangwei [1 ]
Teraji, Tokuyuki [1 ]
Da, Bo [2 ]
Koide, Yasuo [1 ]
机构：
[1] Natl Inst Mat Sci NIMS, Res Ctr Funct Mat, Tsukuba 3050044, Japan
[2] NIMS, Res & Serv Div Mat Data & Integrated Syst, Tsukuba 3050047, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 03期
关键词：
Boron-doped; diamond; MOSFET; threshold voltage;
D O I：
10.1109/TED.2024.3356468
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Suppression of high threshold voltage (V-TH)for the boron-doped diamond (B-diamond) MOSFETs plays a key role to design the diamond complementary MOS circuits with low gate drive sources. The V-TH can be further suppressed by adjusting B-diamond epitaxial layer thickness, boron doping concentration, and gate oxide thickness. Three MOSFETs with different device structures are fabricated on the same oxygen-terminated B-diamond channel. Thickness and acceptor concentration for the B-diamond epitaxial layer are approximately 800 nm and 1.36 x 10(16 )cm(-3), respectively. A 45 nm-thick Al2O3 is deposited as the gate oxide by an atomic layer deposition technique. Maximum drain currents and ON/OFF ratios for the B-diamond MOSFETs are in the range of -2.4 similar to-4.3 mu A/mm and greater than 10(6), respectively. Their V-TH values are lower than 3.4 V with the lowest one of 0.8 V.
引用
收藏
页码：1764 / 1768
页数：5
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