Review on Resistive Switching Devices Based on Multiferroic BiFeO3

被引：10

作者：

Zhao, Xianyue ^{[1
,2
]}

Menzel, Stephan ^{[3
]}

Polian, Ilia ^{[4
]}

Schmidt, Heidemarie ^{[1
,2
]}

Du, Nan ^{[1
,2
]}

机构：

[1] Friedrich Schiller Univ Jena, Inst Solid State Phys, Helmholtzweg 3, D-07743 Jena, Germany

[2] Leibniz Inst Photon Technol IPHT, Dept Quantum Detect, Albert Einstein Str 9, D-07745 Jena, Germany

[3] Forschungszentrum Julich Juelich GmbH, Peter Grunberg Inst PGI 7, Wilhelm Johnen Str, D-52428 Julich, Germany

[4] Univ Stuttgart, Inst Comp Sci & Comp Engn, Pfaffenwaldring 47, D-70569 Stuttgart, Germany

来源：

NANOMATERIALS | 2023年 / 13卷 / 08期

关键词：

multiferroic BiFeO3; resistive switching; crystal structure; ferroelectricity; FT[!text type='Js']Js[!/text; VCM; switching property; energy consumption; THIN-FILMS; FERROELECTRICITY; MODULATION; CONDUCTION; BEHAVIOR; COMPACT; HYBRID; SYSTEM; IMPACT;

D O I：

10.3390/nano13081325

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO3 (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and corresponding crystal types responsible for RS behaviors in BFO-based memristive devices are analyzed. The physical mechanisms underlying RS in BFO-based memristive devices, i.e., ferroelectricity and valence change memory, are thoroughly reviewed, and the impact of various effects such as the doping effect, especially in the BFO layer, is evaluated. Finally, this review provides the applications of BFO devices and discusses the valid criteria for evaluating the energy consumption in RS and potential optimization techniques for memristive devices.

引用

页数：19

共 101 条

[1] Highly-stable memristive devices based on poly(methylmethacrylate): CsPbCl3 perovskite quantum dot hybrid nanocomposites [J].