Gate-Bias Induced RON Instability in p-GaN Power HEMTs

被引：6
作者：
Chini, Alessandro [1 ]
Zagni, Nicolo [1 ]
Verzellesi, Giovanni [2 ,3 ]
Cioni, Marcello [1 ,4 ]
Giorgino, Giovanni [1 ,4 ]
Nicotra, Maria Concetta [4 ]
Castagna, Maria Eloisa [4 ]
Iucolano, Ferdinando [4 ]
机构：
[1] Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy
[2] Univ Modena & Reggio Emilia, Dept Sci & Methods Engn DISMI, I-42122 Reggio Emilia, Italy
[3] Univ Modena & Reggio Emilia, EN & TECH Ctr, I-42122 Reggio Emilia, Italy
[4] STMicroelect, I-95121 Catania, Italy
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 06期
基金：
欧盟地平线“2020”;
关键词：
Logic gates; Transient analysis; MODFETs; HEMTs; Wide band gap semiconductors; Aluminum gallium nitride; Behavioral sciences; pGaN HEMTs; dynamic ON-resistance; instability; NBTI; PBTI; barrier traps; THRESHOLD VOLTAGE INSTABILITY; SHIFT;
D O I：
10.1109/LED.2023.3265503
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we investigate the on-resistance (R-ON) instability in p-GaN power HEMTs induced by a positive or negative gate bias (V-GB), following the application of a quasi-static initialization voltage (V-GP) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90-135 C-? range. By monitoring the resulting drain current transients, the activation energy as well as time constants of the processes are characterized. Not trivially, both R-ON increase/decrease were found to be thermally activated and with same activation energy. We attribute the thermal activation of both R-ON increase/decrease to the charging/discharging of hole traps present in the AlGaN barrier in the region below the gate.
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收藏
页码：915 / 918
页数：4
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