Simulation of all-optical NOR gate design with improved extinction ratio using semiconductor optical amplifier

被引：1

作者：

Vadukanathan, Anusooya ^{[1
,5
]}

Suyambragasam, Gobalakrishnan ^{[2
]}

Sivaraj, Ponmalar ^{[3
]}

Kasiviswanathan, Manikandan Moola Seetharamaier ^{[4
]}

机构：

[1] Rajalakshmi Engn Coll, Dept ECE, Chennai, Tamil Nadu, India

[2] Rajalakshmi Engn Coll, Dept Phys, Chennai, Tamil Nadu, India

[3] Velammal Coll Engn & Technol, Dept CSE, Madurai, Tamil Nadu, India

[4] Thiagarajar Coll Engn, Dept ECE, Madurai, Tamil Nadu, India

[5] Rajalakshmi Engn Coll, Dept ECE, Chennai 602105, Tamil Nadu, India

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2024年 / 66卷 / 01期

关键词：

all-optical logic gate; cross-gain modulation; extinction ratio; Kerr effect; NOR gate; semiconductor optical amplifier; MULTIPLE LOGIC GATES; XOR;

D O I：

10.1002/mop.33993

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical computers, leveraging the advantages of light characteristics, hold the potential to outperform electronic computers significantly. The role of all-optical logic gates is pivotal in realizing such high-performance computing systems. This research introduces a streamlined design for an all-optical NOR logic gate utilizing a semiconductor optical amplifier. The proposed gate operates at a remarkable data rate of 40 Gbps, achieving an excellent extinction ratio of 20.285 dB. Notably, the design exhibits very low dispersion (-0.029 x 10+006 ps/nm) and an impressively low bit error rate of 4.27 x 10-26.

引用

页数：7

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