Simulation of all-optical NOR gate design with improved extinction ratio using semiconductor optical amplifier

被引:0
作者
Vadukanathan, Anusooya [1 ,5 ]
Suyambragasam, Gobalakrishnan [2 ]
Sivaraj, Ponmalar [3 ]
Kasiviswanathan, Manikandan Moola Seetharamaier [4 ]
机构
[1] Rajalakshmi Engn Coll, Dept ECE, Chennai, Tamil Nadu, India
[2] Rajalakshmi Engn Coll, Dept Phys, Chennai, Tamil Nadu, India
[3] Velammal Coll Engn & Technol, Dept CSE, Madurai, Tamil Nadu, India
[4] Thiagarajar Coll Engn, Dept ECE, Madurai, Tamil Nadu, India
[5] Rajalakshmi Engn Coll, Dept ECE, Chennai 602105, Tamil Nadu, India
关键词
all-optical logic gate; cross-gain modulation; extinction ratio; Kerr effect; NOR gate; semiconductor optical amplifier; MULTIPLE LOGIC GATES; XOR;
D O I
10.1002/mop.33993
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical computers, leveraging the advantages of light characteristics, hold the potential to outperform electronic computers significantly. The role of all-optical logic gates is pivotal in realizing such high-performance computing systems. This research introduces a streamlined design for an all-optical NOR logic gate utilizing a semiconductor optical amplifier. The proposed gate operates at a remarkable data rate of 40 Gbps, achieving an excellent extinction ratio of 20.285 dB. Notably, the design exhibits very low dispersion (-0.029 x 10+006 ps/nm) and an impressively low bit error rate of 4.27 x 10-26.
引用
收藏
页数:7
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