Effect of Twist Angle on Interfacial Thermal Transport in Two-Dimensional Bilayers

被引:20
作者
Zhang, Lenan [1 ]
Zhong, Yang [1 ]
Li, Xiangyu [1 ]
Park, Ji-Hoon [2 ]
Song, Qichen [1 ]
Li, Long [3 ]
Guo, Liang [3 ]
Kong, Jing [2 ]
Chen, Gang [1 ]
机构
[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[3] Southern Univ Sci & Technol, Dept Mech & Energy Engn, Shenzhen 518055, Peoples R China
关键词
2D materials; thermal transport; phonon; interface; twist angle; MONOLAYER; MOS2;
D O I
10.1021/acs.nanolett.3c01050
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Advances in two-dimensional (2D) devices require innovative approaches for manipulating transport properties. Analogous to the electrical and optical responses, it has been predicted that thermal transport across 2D materials can have a similar strong twist-angle dependence. Here, we report experimental evidence deviating from this understanding. In contrast to the large tunability in electrical transport, we measured an unexpected weak twist-angle dependence of interfacial thermal transport in MoS2 bilayers, which is consistent with theoretical calculations. More notably, we confirmed the existence of distinct regimes with weak and strong twist-angle dependencies for thermal transport, where, for example, a much stronger change with twist angles is expected for graphene bilayers. With atomic simulations, the distinct twist-angle effects on different 2D materials are explained by the suppression of long-wavelength phonons via the moire ' superlattice. These findings elucidate the unique feature of 2D thermal transport and enable a new design space for engineering thermal devices.
引用
收藏
页码:7790 / 7796
页数:7
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