Luminescence of Cr-doped β-Ga2O3 thin films

被引：2

作者：

Bordun, O. M. ^{[1
]}

Bordun, B. O.

Kukharskyy, I. Yo. ^{[1
]}

Maksymchuk, D. M. ^{[1
]}

Medvid, I. I. ^{[1
]}

机构：

[1] Ivan Franko Natl Univ Lviv, Lvov, Ukraine

来源：

PHYSICS AND CHEMISTRY OF SOLID STATE | 2023年 / 24卷 / 03期

关键词：

gallium oxide; activator; thin films; photoluminescence; cathodoluminescence; PHOTOLUMINESCENCE PROPERTIES; CRYSTALS;

D O I：

10.15330/pcss.24.3.490-494

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The results of investigation of optical excitation, photoluminescence (PL) and cathodoluminescence (CL) spectra in Cr-doped beta-Ga2O3 thin films are presented. The broad bands due to the generation of electron-hole pairs and transitions from the 4A2 ground level to the 4T1 and 4T2 excited states in Cr3+ ions are observed in the photoexcitation spectra. The R-lines and phonon repetitions of R-lines are observed on the luminescence spectra against the background of a broad structureless band with a maximum around 700 nm, caused by the 4T2 - 4A2 transitions in Cr3+ ions. The crystal field force Dq was determined and the Stokes and anti-Stokes repetitions of Rlines were interpreted.

引用

收藏

页码：490 / 494

页数：5

相关论文

共 27 条

[1] Modal Analysis of β-Ga2O3:Cr Widely Tunable Luminescent Optical Microcavities [J].

Alonso-Orts, M. ;

Nogales, E. ;

San Juan, J. M. ;

No, M. L. ;

Piqueras, J. ;

Mendez, B. .

PHYSICAL REVIEW APPLIED, 2018, 9 (06)

[2] X-Ray Luminescence of β-Ga2O3 Thin Films [J].

Bordun, O. M. ;

Bordun, B. O. ;

Kukharskyy, I. Yo. ;

Medvid, I. I. .

JOURNAL OF APPLIED SPECTROSCOPY, 2020, 86 (06) :1010-1013

[3] Photoluminescence Properties of β-Ga2O3 Thin Films Produced by Ion-Plasma Sputtering [J].

Bordun, O. M. ;

Bordun, B. O. ;

Kukharskyy, I. Yo. ;

Medvid, I. I. .

JOURNAL OF APPLIED SPECTROSCOPY, 2017, 84 (01) :46-51

[4] Photo- and Cathodoluminescence of ZnGa2O4:Cr Thin Films [J].

Bordun, O. M. ;

Bihday, V. G. ;

Kukharskyy, I. Yo. .

JOURNAL OF APPLIED SPECTROSCOPY, 2014, 81 (01) :43-48

[5]

Bordun O.M., 2016, Ga2O3, V17, P515, DOI [10.15330/pcss.17.4.515-519, DOI 10.15330/PCSS.17.4.515-519]

[6]

Bordun O.M., 2017, Nanosistemi, Nanomateriali, Nanotehnologii, V15, P299

[7]

Bordun O.M., 2022, Nanosistemi, Nanomateriali, Nanotehnologii, V20, P321, DOI [DOI 10.15407/NNN.20.02.321, 10.15407/nnn, DOI 10.15407/NNN]

[8] Luminescence characteristics of ZnGa2O4 thick film doped with Mn2+ and Cr3+ at various sintering temperatures [J].

Cha, Jae Hyeok ;

Kim, Kyung Hwan ;

Park, Yong Seo ;

Kwon, Sang Jik ;

Choi, Hyung Wook .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10A) :6702-6704

[9] VALENCE FORCE-FIELD AND RAMAN-SPECTRA OF BETA-GA2O3 [J].

DOHY, D ;

LUCAZEAU, G .

JOURNAL OF MOLECULAR STRUCTURE, 1982, 79 (1-4) :419-422

[10] Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al [J].

Galazka, Zbigniew ;

Ganschow, Steffen ;

Fiedler, Andreas ;

Bertram, Rainer ;

Klimm, Detlef ;

Irmscher, Klaus ;

Schewski, Robert ;

Pietsch, Mike ;

Albrecht, Martin ;

Bickermann, Matthias .

JOURNAL OF CRYSTAL GROWTH, 2018, 486 :82-90