Photoluminescence of bulk α-In2Se3 crystals irradiated by high-energy electrons

被引：2
作者：
Lobanov, A. D. [1 ]
Sulimov, M. A. [1 ,2 ]
Radzivonchik, D. I. [1 ]
Sarychev, M. N. [2 ]
Ivanov, V. Yu. [2 ]
Kuznetsova, T. V. [1 ,2 ]
机构：
[1] RAS, MN Mikheev Inst Met Phys, UB, Ekaterinburg, Russia
[2] Ural Fed Univ, Ekaterinburg, Russia
来源：
APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 26期
基金：
俄罗斯科学基金会;
关键词：
OPTICAL-PROPERTIES; QUANTUM CONFINEMENT; SOLAR-CELLS; THIN-FILMS; IN2SE3; PHOTODIODES; PHOTORESPONSIVITY; OPTIMIZATION; PERFORMANCE; EXCITONS;
D O I：
10.1063/5.0180807
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photoluminescence (PL) spectra of bulk alpha-In2Se3 crystals before and after 10 MeV electrons irradiation with the 10(15) and 10(17) cm(-2) fluences were studied in the temperature range from 7 to 340 K. Three main types of radiative recombinations corresponding to band-to-tail (BT), deep defects, and band-to-band (BB) recombination were manifested in the non-irradiated alpha-In2Se3 crystals. Also recombinations that can be associated with exciton recombinations at temperatures below 45 K are observed. After electron irradiation, noticeable changes in the PL spectra are observed. We detected a slight increase in activation energy of the BT recombination. An increase in the concentration of deep defects is also noted. The significant decrease in PL intensity of the BB recombinations indicates the formation of non-radiative recombination centers after electron irradiation with the 10(17) cm(-2) fluence. Our study may be useful for understanding the effects of high-energy electrons irradiation on the performance of electronic and photovoltaic devices based on alpha-In2Se3.
引用
收藏
页数：6
相关论文
共 56 条
[1]   High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In2Se3 nanosheet photodetectors [J].
Anandan, Manickam ;
Hsieh, Ho-Feng ;
Liu, Fang-Chen ;
Chen, Chi-Yang ;
Lee, Kuei-Yi ;
Chao, Liang-Chiun ;
Ho, Ching-Hwa ;
Chen, Ruei-San .
NANOTECHNOLOGY, 2020, 31 (46)
[2]   GaAs and AlGaAs photodiodes for ionizing radiation detectors [J].
Andreev, VM ;
Milanova, MM ;
Khvostikov, VP .
SOLID-STATE ELECTRONICS, 2003, 47 (10) :1835-1841
[3]   Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport [J].
Balakrishnan, Nilanthy ;
Staddon, Christopher R. ;
Smith, Emily F. ;
Stec, Jakub ;
Gay, Dean ;
Mudd, Garry W. ;
Makarovsky, Oleg ;
RKudrynskyi, Zakhar ;
Kovalyuk, Zakhar D. ;
Eaves, Laurence ;
Patane, Amalia ;
Beton, Peter H. .
2D MATERIALS, 2016, 3 (02)
[4]   PHOTOLUMINESCENCE STUDIES ON THE LAYER SEMICONDUCTOR IN2SE3 [J].
BALKANSKI, M ;
JULIEN, C ;
CHEVY, A ;
KAMBAS, K .
SOLID STATE COMMUNICATIONS, 1986, 59 (07) :423-427
[5]   Optical properties of In2Se3 thin films [J].
Bodnar, I. V. .
SEMICONDUCTORS, 2016, 50 (06) :715-718
[6]   Quantum and conversion efficiencies optimization of superstrate CIGS thin-films solar cells using In2Se3 buffer layer [J].
Bouchama, Idris ;
Boudour, Samah ;
Bouarissa, Nadir ;
Rouabah, Zahir .
OPTICAL MATERIALS, 2017, 72 :177-182
[7]   Reevaluation of Photoluminescence Intensity as an Indicator of Efficiency in Perovskite Solar Cells [J].
Campanari, Valerio ;
Martelli, Faustino ;
Agresti, Antonio ;
Pescetelli, Sara ;
Nia, Narges Yaghoobi ;
Di Giacomo, Francesco ;
Catone, Daniele ;
O'Keeffe, Patrick ;
Turchini, Stefano ;
Yang, Bowen ;
Suo, Jiajia ;
Hagfeldt, Anders ;
Di Carlo, Aldo .
SOLAR RRL, 2022, 6 (08)
[8]   On the Relation between the Open-Circuit Voltage and Quasi-Fermi Level Splitting in Efficient Perovskite Solar Cells [J].
Caprioglio, Pietro ;
Stolterfoht, Martin ;
Wolff, Christian M. ;
Unold, Thomas ;
Rech, Bernd ;
Albrecht, Steve ;
Neher, Dieter .
ADVANCED ENERGY MATERIALS, 2019, 9 (33)
[9]   Understanding Microscopic Operating Mechanisms of a van der Waals Planar Ferroelectric Memristor [J].
Gabel, Matthew ;
Gu, Yi .
ADVANCED FUNCTIONAL MATERIALS, 2021, 31 (09)
[10]   Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances [J].
Han, Guang ;
Chen, Zhi-Gang ;
Drennan, John ;
Zou, Jin .
SMALL, 2014, 10 (14) :2747-2765
123456