Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0.5Zr0.5O2 ferroelectric thin films

被引：10

作者：

Zheng, Yunzhe ^{[1
]}

Zhang, Yuke ^{[1
]}

Xin, Tianjiao ^{[1
]}

Xu, Yilin ^{[1
]}

Qu, Shuangquan ^{[2
,3
]}

Zheng, Junding ^{[1
]}

Gao, Zhaomeng ^{[1
]}

Zhong, Qilan ^{[1
]}

Wang, Yiwei ^{[1
]}

Feng, Xiaoyu ^{[1
]}

Zheng, Yonghui ^{[1
]}

Cheng, Yan ^{[1
]}

Shao, Ruiwen ^{[2
,3
]}

Lin, Fang ^{[4
]}

Lin, Xiaoling ^{[5
]}

Tian, He ^{[6
]}

Huang, Rong ^{[1
]}

Duan, Chungang ^{[1
]}

Lyu, Hangbing ^{[7
]}

机构：

[1] East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China

[2] Beijing Inst Technol, Beijing Adv Innovat Ctr Intelligent Robots & Syst, Beijing 100081, Peoples R China

[3] Beijing Inst Technol, Inst Engn, Beijing 100081, Peoples R China

[4] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Peoples R China

[5] China Elect Prod Reliabil & Environm Testing Res I, Sci & Technol Reliabil Phys & Applicat Elect Compo, Guangzhou, Guangdong, Peoples R China

[6] Zhejiang Univ, Ctr Electron Microscopy, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China

[7] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China

来源：

MATERIALS TODAY NANO | 2023年 / 24卷

基金：

中国国家自然科学基金; 上海市自然科学基金;

关键词：

Ferroelectric; HZO; 90 degrees domain wall; Scanning transmission electron microscope; OXIDE; MECHANISM;

D O I：

10.1016/j.mtnano.2023.100406

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Domain walls (DWs) play an essential role in altering the polarization and related properties of ferroelectric materials, and are regulated by the mechanism of changing atomic configuration. However, compared with perovskite ferroelectrics, the DWs in hafnia-based fluorite-structure ferroelectric is experimentally lacking, especially with regard to detailed studies of atomic-scale structures. The present work used spherical aberration-corrected transmission electron microscope combined with in-situ technique to ascertain the origin, atomic arrangements of 90 degrees DWs in Hf0.5Zr0.5O2 thin films. Different types of 90 degrees DWs were found to exhibit varying migration behaviors in response to the concentration of oxygen vacancies. Point defects and corresponding changes in the local strain field are proposed to drive DW switching in this material. These new insights into the atomic-scale characteristics of 90 degrees DWs are expected to assist in elucidating the structure of DWs and improve our understanding of the ferroelectric characteristics of new type hafnia-based materials.

引用

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