Manipulating Crystal Stacking by Sidechain Engineering for High-Performance N-Type Organic Semiconductors

被引:4
|
作者
Chen, Yuzhong [1 ]
Wu, Zeng [1 ]
Ding, Lu [2 ]
Zhang, Shuixin [1 ]
Chen, Zekun [1 ]
Li, Wenhao [1 ]
Zhao, Yan [1 ]
Wang, Yang [1 ]
Liu, Yunqi [1 ]
机构
[1] Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, State Key Lab Mol Engn Polymers, 2005 Songhu Rd, Shanghai 200438, Peoples R China
[2] Hong Kong Univ Sci & Technol, Fok Ying Tung Res Inst, Guangzhou 511458, Peoples R China
基金
上海市自然科学基金; 中国国家自然科学基金;
关键词
branched alkyl/alkoxy substitutions; charge transport property; crystal stackings; organic field-effect transistors; Y-series non-fullerene acceptors; NON-FULLERENE ACCEPTORS; SOLAR-CELLS; CHARGE-TRANSPORT; WAVE-FUNCTION; SERIES;
D O I
10.1002/adfm.202304316
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Y-series non-fullerene acceptors (NFAs) have achieved great progress in organic solar cells (OSCs). Most research attention is currently paid to their molecular engineering to improve the efficiency of OSCs. However, as n-type organic semiconductors, the relationship between their molecular packing structures and charge transport properties is mostly ignored. Herein, it is clarified how the molecular packing of Y-series NFAs fundamentally determines their charge transport properties by manipulating their crystal stacking via sidechain engineering. Therefore, branched alkyl/alkoxy substitutions are taken on a reference NFA (Y6-1O), affording three derivatives, namely 1OBO-1, 1OBO-2, and 1OBO-3. Results show that while the replacement of branched alkyl/alkoxy sidechains has little impact on optical properties and energy levels, it can change crystal stacking motifs significantly. The single crystal of Y6-1O with all linear sidechains forms a 2D-brickwork structure and shows lower mobility. In contrast, 1OBO-2 with all branched sidechains exhibits a favorable 3D interpenetrating porous network, displaying an electron mobility of 1.42 cm2 V-1 s-1 in single-crystal organic field-effect transistors (SC-OFETs). This value is among the highest for NFA-based n-type OFETs. This study not only reveals the fundamental structure-property relationships of Y-series NFAs, but also suggests the potential of Y-series NFAs for high-performance n-type organic semiconductors. How the molecular packing of Y-series non-fullerene acceptors fundamentally determines their charge-transport properties is clarified by manipulating their crystal stacking via sidechain engineering. Therefore, the all-branched-chains-substituted derivative, namely 1OBO-2, exhibits single crystal structure with a favorable 3D interpenetrating porous network. It thus results in an excellent electron mobility of 1.42 cm2 V-1 s-1 in organic single-crystal transistors.image
引用
收藏
页数:10
相关论文
共 50 条
  • [21] Disintegrable n-Type Electroactive Terpolymers for High-Performance, Transient Organic Electronics
    Park, Hyeonjung
    Kim, Youngkwon
    Kim, Donguk
    Lee, Seungjin
    Kim, Felix Sunjoo
    Kim, Bumjoon J.
    ADVANCED FUNCTIONAL MATERIALS, 2022, 32 (02)
  • [22] An n-Type Conjugated Polymer with Low Crystallinity for High-Performance Organic Thermoelectrics
    Gao, Yuexin
    Ke, Yunzhe
    Wang, Tianzuo
    Shi, Yibo
    Wang, Cheng
    Ding, Shuaishuai
    Wang, Yupu
    Deng, Yunfeng
    Hu, Wenping
    Geng, Yanhou
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2024, 63 (20)
  • [23] High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices
    Park, Yerok
    Han, Kyu S.
    Lee, Byoung H.
    Cho, Sangho
    Lee, Kwang H.
    Im, Seongil
    Sung, Myung M.
    ORGANIC ELECTRONICS, 2011, 12 (02) : 348 - 352
  • [24] Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors
    Lin, Y.
    Shen, P-C
    Su, C.
    Chou, A-S
    Wu, T.
    Cheng, C-C
    Park, J-H
    Chiu, M-H
    Lu, A-Y
    Tang, H-L
    Tavakoli, M. M.
    Pitner, G.
    Ji, X.
    McGahan, C.
    Wang, X.
    Cai, Z.
    Mao, N.
    Wang, J.
    Wang, Y.
    Tisdale, W.
    Ling, X.
    Aidala, K. E.
    Tung, V
    Li, J.
    Zettl, A.
    Wu, C-, I
    Guo, Jing
    Wang, H.
    Bokor, J.
    Palacios, T.
    Li, L-J
    Kong, J.
    2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2021,
  • [25] High Efficiency n-Type Doping of Organic Semiconductors by Cation Exchange
    Zhao, Xiaolei
    Alsufyani, Maryam
    Tian, Junfu
    Lin, Yuanbao
    Jeong, Sang Young
    Han, Young Woo
    Yin, Yi
    McCulloch, Iain
    ADVANCED MATERIALS, 2024, 36 (47)
  • [26] Complementary Logic Circuits Based on High-Performance n-Type Organic Electrochemical Transistors
    Sun, Hengda
    Vagin, Mikhail
    Wang, Suhao
    Crispin, Xavier
    Forchheimer, Robert
    Berggren, Magnus
    Fabiano, Simone
    ADVANCED MATERIALS, 2018, 30 (09)
  • [27] High performance n-type vertical organic phototransistors
    Yeliu, Kaiheng
    Zhong, Jianfeng
    Wang, Xiumei
    Yan, Yujie
    Chen, Qizhen
    Ye, Yun
    Chen, Huipeng
    Guo, Tailiang
    ORGANIC ELECTRONICS, 2019, 67 : 200 - 207
  • [28] 6,6′-Diaryl-substituted biazulene diimides for solution-processable high-performance n-type organic semiconductors
    Xin, Hanshen
    Li, Jing
    Ge, Congwu
    Yang, Xiaodi
    Xue, Tianrui
    Gao, Xike
    MATERIALS CHEMISTRY FRONTIERS, 2018, 2 (05) : 975 - 985
  • [29] Improving both performance and stability of n-type organic semiconductors by vitamin C
    Yuan, Liqian
    Huang, Yinan
    Chen, Xiaosong
    Gao, Yixuan
    Ma, Xiaonan
    Wang, Zhongwu
    Hu, Yongxu
    He, Jinbo
    Han, Cheng
    Li, Jing
    Li, Zhiyun
    Weng, Xuefei
    Huang, Rong
    Cui, Yi
    Li, Liqiang
    Hu, Wenping
    NATURE MATERIALS, 2024, 23 (09) : 1268 - 1275
  • [30] High-Performance Ambipolar and n-Type Emissive Semiconductors Based on Perfluorophenyl-Substituted Perylene and Anthracene
    Chen, Liangliang
    Qin, Zhengsheng
    Huang, Han
    Zhang, Jing
    Yin, Zheng
    Yu, Xiaobo
    Zhang, Xi-sha
    Li, Cheng
    Zhang, Guanxin
    Huang, Miaofei
    Dong, Huanli
    Yi, Yuanping
    Jiang, Lang
    Fu, Hongbing
    Zhang, Deqing
    ADVANCED SCIENCE, 2023, 10 (15)