Modification of interlayer interaction in bilayer MoS2 due to monolayer WSe2 in heterostructures

被引:1
|
作者
Oh, Siwon [1 ]
Kim, Han-gyu [2 ]
Kim, Jungcheol [1 ]
Jeong, Huiseok [2 ]
Choi, Hyoung Joon [2 ]
Cheong, Hyeonsik [1 ]
机构
[1] Sogang Univ, Dept Phys, Seoul 04107, South Korea
[2] Yonsei Univ, Dept Phys, Seoul 03722, South Korea
基金
新加坡国家研究基金会;
关键词
TMD heterostructure; Moire phonon; interlayer interaction; Raman spectroscopy; MOIRE;
D O I
10.1088/2053-1583/ad1a6f
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The low-frequency interlayer vibration modes in bilayer-MoS2/monolayer-WSe2 heterostructures were investigated to study the modification of interlayer interactions due to the moire periodicity. The interplay of the interlayer interaction within bilayer MoS2 and the interfacial interaction between the two materials results in rich features in the phonon spectra. Several shear and breathing modes are observed for samples with small twist angles (<10(degrees)), whereas only one shear and two breathing modes are observed for larger twist angles. For larger twist angles, the interfacial interaction between the two materials amounts to similar to 75% of the intrinsic interlayer interaction between the MoS2 layers. The phonon spectrum evolves non-monotonically as the twist angle increases, which is explained with the help of atomistic calculations.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Effect of S Vacancy and Interlayer Interaction on the Electronic and Optical Properties of MoS2/WSe2 Heterostructure
    Zhen, Xuan
    Liu, Huating
    Liu, Fei
    Zhang, Shenrui
    Zhong, Jianxin
    Huang, Zongyu
    JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (02) : 1186 - 1192
  • [2] Effect of S Vacancy and Interlayer Interaction on the Electronic and Optical Properties of MoS2/WSe2 Heterostructure
    Xuan Zhen
    Huating Liu
    Fei Liu
    Shenrui Zhang
    Jianxin Zhong
    Zongyu Huang
    Journal of Electronic Materials, 2023, 52 : 1186 - 1192
  • [3] Biaxial Strain Transfer in Monolayer MoS2 and WSe2 Transistor Structures
    Michail, Antonios
    Yang, Jerry A.
    Filintoglou, Kyriakos
    Balakeras, Nikolaos
    Nattoo, Crystal Alicia
    Bailey, Connor Scott
    Daus, Alwin
    Parthenios, John
    Pop, Eric
    Papagelis, Konstantinos
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (37) : 49602 - 49611
  • [4] Spatial Filtering of Interlayer Exciton Ground State in WSe2/MoS2 Heterobilayer
    Chen, Disheng
    Dini, Kevin
    Rasmita, Abdullah
    Huang, Zumeng
    Tan, Qinghai
    Cai, Hongbing
    He, Ruihua
    Miao, Yansong
    Liew, Timothy C. H.
    Gao, Weibo
    NANO LETTERS, 2024, 24 (29) : 8795 - 8800
  • [5] Localization and interaction of interlayer excitons in MoSe2/WSe2 heterobilayers
    Fang, Hanlin
    Lin, Qiaoling
    Zhang, Yi
    Thompson, Joshua
    Xiao, Sanshui
    Sun, Zhipei
    Malic, Ermin
    Dash, Saroj P.
    Wieczorek, Witlef
    NATURE COMMUNICATIONS, 2023, 14 (01)
  • [6] Tunable photoluminescence of bilayer MoS2 via interlayer twist
    Zhang, Xiangzhe
    Zhang, Renyan
    Zhang, Yi
    Jiang, Tian
    Deng, Chuyun
    Zhang, Xueao
    Qin, Shiqiao
    OPTICAL MATERIALS, 2019, 94 : 213 - 216
  • [7] Chemical Vapor Deposition Growth of Vertical Graphene/WSe2 Heterostructures with Interlayer Twists
    Zhou, Xiahong
    Liu, Mengya
    Xue, Xudong
    Liu, Shan
    Yu, Gui
    ADVANCED MATERIALS TECHNOLOGIES, 2025, 10 (01):
  • [8] Effect of sulphur vacancy and interlayer interaction on the electronic structure and spin splitting of bilayer MoS2
    Dong, Yulan
    Zeng, Bowen
    Xiao, Jin
    Zhang, Xiaojiao
    Li, Dongde
    Li, Mingjun
    He, Jun
    Long, Mengqiu
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 30 (12)
  • [9] Different optical characteristics between monolayer and bilayer WS2 due to interlayer interaction
    Xu, Xuejun
    Li, Lihui
    Li, Xiaoli
    Hu, Xiaowen
    Yang, Mingming
    Guo, Qinglin
    Wang, Ying
    Zhuang, Xiujuan
    Liang, Baolai
    OPTIK, 2022, 251
  • [10] Gain-type photodetector with GFET-coupled MoS2/WSe2 heterojunction
    Xiang, Xinjie
    Qiu, Zhifei
    Zhang, Yuhan
    Chen, Xinhao
    Wu, Zhangting
    Zheng, Hui
    Zhang, Yang
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 1002