Thermoelectric properties of sputter deposited Bi2Te3-PbTe multilayer thin films

被引:4
|
作者
Rawther, Ahmed Nazeer [1 ]
Rout, Umasankar [1 ]
Kumar, D. S. Prem [2 ]
Ramanathan, Ramarajan [1 ]
Mallik, Ramesh Chandra [1 ]
机构
[1] Indian Inst Sci IISc, Dept Phys, Thermoelectr Mat & Device Lab, Bengaluru 560012, India
[2] REVA Univ, Sch Appl Sci, Dept Phys, Bengaluru 560064, India
关键词
Thermoelectric; Thin film; Multilayer; Seebeck coefficient; Power factor; BISMUTH TELLURIDE; SB2TE3/BI2TE3; STRAIN;
D O I
10.1016/j.physb.2023.415467
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Pristine Bi2Te3, PbTe, and multilayer of Bi2Te3/PbTe thin films were deposited on a glass substrate using the DC magnetron sputtering technique. XRD, FE-SEM, AFM, Raman, electrical, and thermal properties were analyzed to understand the structural, surface, electrical resistivity, Seebeck coefficient, and electrical part of thermal conductivity of the films. The structural analysis by XRD confirms the phase purity of the pristine films and the mixed phase for the multilayer films. FE-SEM morphology images showed a significant variation in the surface structure. The Seebeck coefficient, resistivity, and power factor analysis were carried out to understand the charge transfer processes. Multilayer films exhibited a high absolute Seebeck coefficient (S) value of -140.6 mu V/ K for BPB-5 film and -130.6 mu V/K for BP -6 film compared to -92.9 mu V/K of Bi2Te3 film with n -type behavior at 370 K. Similarly; the power factor value is also higher for multi -layer films compared to pristine film.
引用
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页数:10
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