High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

被引：5

作者：

Lee, Junhee ^{[1
]}

Gautam, Lakshay ^{[1
]}

Razeghi, Manijeh ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect & Comp Engn, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 15期

关键词：

FILMS;

D O I：

10.1063/5.0170383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report high-quality Ga2O3 grown on an AlGaN/AlN/Sapphire in a single growth run in the same Metal Organic Chemical Vapor Deposition reactor with an AlOx interlayer at the Ga2O3/AlGaN interface. AlOx interlayer was found to enable the growth of single crystalline Ga2O3 on AlGaN in spite of the high lattice mismatch between the two material systems. The resulting nitride/oxide heterogenous heterostructures showed superior material qualities, which were characterized by structural, electrical, and optical characterization techniques. In particular, a significant enhancement of the electron mobility of the nitride/oxide heterogenous heterostructure is reported when compared to the individual electron mobilities of the Ga2O3 epilayer on the sapphire substrate and the AlGaN/AlN heterostructure on the sapphire substrate. This enhanced mobility marks a significant step in realizing the next generation of power electronic devices and transistors.

引用

页数：5

共 22 条

[1] A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN [J].

Bayram, C. ;

Teherani, F. Hosseini ;

Rogers, D. J. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (08)

[2] Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage [J].

Chabak, Kelson D. ;

Moser, Neil ;

Green, Andrew J. ;

Walker, Dennis E. ;

Tetlak, Stephen E. ;

Heller, Eric ;

Crespo, Antonio ;

Fitch, Robert ;

McCandless, Jonathan P. ;

Leedy, Kevin ;

Baldini, Michele ;

Wagner, Gunter ;

Galazka, Zbigniew ;

Li, Xiuling ;

Jessen, Gregg .

APPLIED PHYSICS LETTERS, 2016, 109 (21)

[3] Aluminum nitride films on different orientations of sapphire and silicon [J].

Dovidenko, K ;

Oktyabrsky, S ;

Narayan, J ;

Razeghi, M .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2439-2445

[4]

Gautam Lakshay, 2021, IEEE Journal of Quantum Electronics, V57, DOI [10.1109/jqe.2020.3048701, 10.1109/JQE.2020.3048701]

[5]

Kung P., 1998, Mater. Res. Soc. Internet J. Nitride Semicond. Res, V3, pe1, DOI [10.1557/S1092578300000739, DOI 10.1557/S1092578300000739]

[6] AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation [J].

Kuzuhara, Masaaki ;

Asubar, Joel T. ;

Tokuda, Hirokuni .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (07)

[7] Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations [J].

Lee, H-P. ;

Perozek, J. ;

Rosario, L. D. ;

Bayram, C. .

SCIENTIFIC REPORTS, 2016, 6

[8] Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ-Ga2O3 Due to Interfacing with β-Ga2O3 Template Layers [J].

Lee, Junhee ;

Gautam, Lakshay ;

Teherani, Ferechteh H. ;

Sandana, Eric V. ;

Bove, Philippe ;

Rogers, David J. ;

Razeghi, Manijeh .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (08)

[9] High Thermal Stability of κ-Ga2O3 Grown by MOCVD [J].

Lee, Junhee ;

Kim, Honghyuk ;

Gautam, Lakshay ;

Razeghi, Manijeh .

CRYSTALS, 2021, 11 (04)

[10] Highly Conductive Co-Doped Ga2O3:Si-In Grown by MOCVD [J].

Lee, Junhee ;

Kim, Honghyuk ;

Gautam, Lakshay ;

Razeghi, Manijeh .

COATINGS, 2021, 11 (03) :1-7

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