Carrier recombination suppression and transport enhancement enable high-performance self-powered broadband Sb2Se3 photodetectors

被引：113
作者：
Chen, Shuo [1 ]
Fu, Yi [1 ]
Ishaq, Muhammad [1 ]
Li, Chuanhao [1 ]
Ren, Donglou [2 ]
Su, Zhenghua [1 ]
Qiao, Xvsheng [3 ,4 ]
Fan, Ping [1 ]
Liang, Guangxing [1 ,6 ]
Tang, Jiang [5 ]
机构：
[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gua, Shenzhen, Guangdong, Peoples R China
[2] Guangxi Univ, MOE Key Lab New Proc Technol Nonferrous Met & Mat, Guangxi Key Lab Proc Nonferrous Met & Featured Mat, Nanning, Guangxi, Peoples R China
[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou, Zhejiang, Peoples R China
[4] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou, Zhejiang, Peoples R China
[5] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect WNLO, Wuhan, Hubei, Peoples R China
[6] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gua, Shenzhen 518060, Guangdong, Peoples R China
来源：
INFOMAT | 2023年 / 5卷 / 04期
基金：
中国国家自然科学基金;
关键词：
photoresponse; recombination suppression; Sb2Se3; self-powered photodetector; transport enhancement; SOLAR-CELLS; EFFICIENCY; NANOWIRE; NANORODS; BULK;
D O I：
10.1002/inf2.12400
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Antimony selenide (Sb2Se3) is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties. Achieving high-performance self-powered Sb2Se3 photodetector through a synergistic regulation of absorber layer and heterojunction interface demonstrates great potential and needs essential investigation. In this study, an effective two-step thermodynamic/kinetic deposition technique containing sputtered and selenized Sb precursor is implemented to induce self-assembled growth of Sb2Se3 light absorbing thin film with large crystal grains and desirable [hk1] orientation, presenting considerable thin-film photodetector performance. Furthermore, aluminum (Al3+) cation dopant is introduced to modify the optoelectronic properties of CdS buffer layer, and further optimize the Sb2Se3/CdS (Al) heterojunction interface quality. Thanks to the suppressed carrier recombination and enhanced carrier transport kinetics, the champion Mo/Sb2Se3/CdS (Al)/ITO/Ag photodetector exhibits self-powered and broadband characteristics, accompanied by simultaneously high responsivity of 0.9 A W-1 (at 11 nW/cm(2)), linear dynamic range of 120 dB, impressive ON/OFF switching ratio over 10(6) and signal-to-noise ratio of 10(9), record total noise determined realistic detectivity of 4.78 x 10(12) Jones, and ultra-fast response speed with rise/decay time of 24/75 ns, representing the top level for Sb2Se3-based photodetectors. This intriguing work opens up an avenue for its self-powered broadband photodetector applications.
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页数：17
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