Determination of spin-orbit interaction in semiconductor nanostructures via nonlinear transport

被引:11
作者
Dantas, Renato M. A. [1 ]
Legg, Henry F. [1 ]
Bosco, Stefano [1 ]
Loss, Daniel [1 ]
Klinovaja, Jelena [1 ]
机构
[1] Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland
基金
欧洲研究理事会; 欧盟地平线“2020”;
关键词
QUANTUM; ULTRAFAST;
D O I
10.1103/PhysRevB.107.L241202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate nonlinear transport signatures stemming from linear and cubic spin-orbit interactions in oneand two-dimensional systems. The analytical zero-temperature response to external fields is complemented by a finite-temperature numerical analysis, establishing a way to distinguish between linear and cubic spin-orbit interactions. We also propose a protocol to determine the relevant material parameters from transport measurements attainable in realistic conditions, illustrated by values for Ge heterostructures. Our results establish a method for the fast benchmarking of spin-orbit properties in semiconductor nanostructures.
引用
收藏
页数:7
相关论文
共 102 条
[1]   Enhanced orbital magnetic field effects in Ge hole nanowires [J].
Adelsberger, Christoph ;
Bosco, Stefano ;
Klinovaja, Jelena ;
Loss, Daniel .
PHYSICAL REVIEW B, 2022, 106 (23)
[2]   Hole-spin qubits in Ge nanowire quantum dots: Interplay of orbital magnetic field, strain, and growth direction [J].
Adelsberger, Christoph ;
Benito, Monica ;
Bosco, Stefano ;
Klinovaja, Jelena ;
Loss, Daniel .
PHYSICAL REVIEW B, 2022, 105 (07)
[3]   Weyl and Dirac semimetals in three-dimensional solids [J].
Armitage, N. P. ;
Mele, E. J. ;
Vishwanath, Ashvin .
REVIEWS OF MODERN PHYSICS, 2018, 90 (01)
[4]  
Ashcroft N., 1976, Solid State Physics
[5]   Toward Hole-Spin Qubits in Si p-MOSFETs within a Planar CMOS Foundry Technology [J].
Bellentani, L. ;
Bina, M. ;
Bonen, S. ;
Secchi, A. ;
Bertoni, A. ;
Voinigescu, S. P. ;
Padovani, A. ;
Larcher, L. ;
Troiani, F. .
PHYSICAL REVIEW APPLIED, 2021, 16 (05)
[6]  
Bosco S., 2022, PHYS REV APPL, V18
[7]   Fully Tunable Longitudinal Spin-Photon Interactions in Si and Ge Quantum Dots [J].
Bosco, Stefano ;
Scarlino, Pasquale ;
Klinovaja, Jelena ;
Loss, Daniel .
PHYSICAL REVIEW LETTERS, 2022, 129 (06)
[8]   Fully Tunable Hyperfine Interactions of Hole Spin Qubits in Si and Ge Quantum Dots [J].
Bosco, Stefano ;
Loss, Daniel .
PHYSICAL REVIEW LETTERS, 2021, 127 (19)
[9]   Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power [J].
Bosco, Stefano ;
Benito, Monica ;
Adelsberger, Christoph ;
Loss, Daniel .
PHYSICAL REVIEW B, 2021, 104 (11)
[10]   Hole Spin Qubits in Si FinFETs With Fully Tunable Spin-Orbit Coupling and Sweet Spots for Charge Noise [J].
Bosco, Stefano ;
Hetenyi, Bence ;
Loss, Daniel .
PRX QUANTUM, 2021, 2 (01)