High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

被引：3

作者：

Deng, Gaoqiang ^{[1
]}

Zhang, Lidong ^{[1
]}

Niu, Yunfei ^{[1
]}

Yu, Jiaqi ^{[1
]}

Ma, Haotian ^{[1
]}

Yang, Shixu ^{[1
]}

Zuo, Changcai ^{[1
]}

Qian, Haotian ^{[1
]}

Duan, Bin ^{[2
]}

Zhang, Baolin ^{[1
]}

Zhang, Yuantao ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[2] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Diode; hole injection; AlGaN; ultraviolet; RECOMBINATION; EFFICIENCY;

D O I：

10.1109/LED.2023.3279450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High hole injection is desired for improving the performance of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs). In this work, we adopted a compositionally graded p-Aly1Ga1-y1N/Al0.85Ga0.15N superlattice (SL) structure in a nitrogen-polarity DUV LED. Our numerical simulation results show that this SL structure is very beneficial to the hole injection into the active region, and leads to a low turn-on voltage and device resistance. This is significant because a low device resistance means a low power consumption and a high wall-plug efficiency. Meanwhile, a DUV LED with compositionally graded SL has a peak internal quantum efficiency (72%) that is much higher than that of the reference DUV LED without an SL (56%). This work provides an attractive approach to effectively injecting holes into the active region of a nitrogen-polarity AlGaN-based DUV LED.

引用

页码：1076 / 1079

页数：4

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